Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200mm Si substrates

Nicolò Ronchi*, Brice De Jaeger, Marleen Van Hove, Robin Roelofs, Tian-Li Wu, Jie Hu, Xuanwu Kang, Stefaan Decoutere

*此作品的通信作者

研究成果: Article › 同行評審

6 引文 斯高帕斯（Scopus）

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Immunology and Microbiology