Combined effects of nitrogen implantation at S/D extension and N ₂O oxide on 0.18 μm N- and P-metal oxide field effect transistors (MOSFETs)

The combined effects of N ₂-implantation at S/D extension and N ₂O oxide on 0.18 μm n- and p-Metal oxide field effect transistors (MOSFETs) were investigated. It is found that for n-channel transistors, V _th roll-off and drain-induced barrier lowering (DIBL) are enhanced by nitrogen incorporation through either N ₂O oxide or N ₂-implantation. However, for p-channel transistors, opposite trends are observed for N ₂O oxide and N ₂-implantation. Finally, nitrogen incorporation by either method is found to improve the interface quality for nMOSFETs. While for p-channel transistors, best results are obtained by the combined effects of N ₂O oxide and N ₂-implantation.