Combined effects of nitrogen implantation at S/D extension and N 2O oxide on 0.18 μm N- and P-metal oxide field effect transistors (MOSFETs)

Tien-Sheng Chao, Sun Jay Chang, Chao-Hsin Chien, Horng-Chih Lin, Tiao Yuan Huang, Chun Yen Chang

研究成果: Article同行評審

摘要

The combined effects of N 2-implantation at S/D extension and N 2O oxide on 0.18 μm n- and p-Metal oxide field effect transistors (MOSFETs) were investigated. It is found that for n-channel transistors, V th roll-off and drain-induced barrier lowering (DIBL) are enhanced by nitrogen incorporation through either N 2O oxide or N 2-implantation. However, for p-channel transistors, opposite trends are observed for N 2O oxide and N 2-implantation. Finally, nitrogen incorporation by either method is found to improve the interface quality for nMOSFETs. While for p-channel transistors, best results are obtained by the combined effects of N 2O oxide and N 2-implantation.

原文English
期刊Japanese Journal of Applied Physics, Part 2: Letters
38
發行號12 A
DOIs
出版狀態Published - 1 十二月 1999

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