TY - JOUR
T1 - Co-Cation Engineering via Mixing of Acetamidinium and Rubidium in FASnI3 for Tin Perovskite Solar Cells to Attain 14.5% Efficiency
AU - Kuan, Chun Hsiao
AU - Liao, Tzu Shen
AU - Narra, Sudhakar
AU - Tsai, Yi Wei
AU - Lin, Jhih Min
AU - Chen, Guan Ruei
AU - Diau, Eric Wei Guang
N1 - Publisher Copyright:
© 2024 The Authors. Published by American Chemical Society.
PY - 2024/8/1
Y1 - 2024/8/1
N2 - Tin perovskite solar cells (TPSCs) were developed by adding the co-cations acetamidinium (AC) and rubidium (Rb) in varied proportions based on the FASnI3 structure (E1). We found that adding 10% AC and 3% Rb can optimize the device (E1AC10Rb3) to attain an efficiency of power conversion of 14.5% with great shelf- and light-soaking stability. The films at varied AC and Rb proportions were characterized using XPS, SEM, AFM, GIWAXS, XRD, TOPAS, TOF-SIMS, UV-vis, PL, TCSPC, and femtosecond TAS techniques to show the excellent optoelectronic properties of the E1AC10Rb3 film in comparison to those of the other films. AC was found to have the effect of passivating the vacancy defects on the surface and near the bottom of the film, while Rb plays a pivotal role in passivating the bottom interface between perovskite and PEDOT:PSS. Therefore, the E1AC10Rb3 device with a band gap of 1.43 eV becomes a promising candidate as a narrow band gap device for tandem lead-free perovskite solar cell development.
AB - Tin perovskite solar cells (TPSCs) were developed by adding the co-cations acetamidinium (AC) and rubidium (Rb) in varied proportions based on the FASnI3 structure (E1). We found that adding 10% AC and 3% Rb can optimize the device (E1AC10Rb3) to attain an efficiency of power conversion of 14.5% with great shelf- and light-soaking stability. The films at varied AC and Rb proportions were characterized using XPS, SEM, AFM, GIWAXS, XRD, TOPAS, TOF-SIMS, UV-vis, PL, TCSPC, and femtosecond TAS techniques to show the excellent optoelectronic properties of the E1AC10Rb3 film in comparison to those of the other films. AC was found to have the effect of passivating the vacancy defects on the surface and near the bottom of the film, while Rb plays a pivotal role in passivating the bottom interface between perovskite and PEDOT:PSS. Therefore, the E1AC10Rb3 device with a band gap of 1.43 eV becomes a promising candidate as a narrow band gap device for tandem lead-free perovskite solar cell development.
UR - http://www.scopus.com/inward/record.url?scp=85199568209&partnerID=8YFLogxK
U2 - 10.1021/acs.jpclett.4c01695
DO - 10.1021/acs.jpclett.4c01695
M3 - Article
C2 - 39046929
AN - SCOPUS:85199568209
SN - 1948-7185
VL - 15
SP - 7763
EP - 7769
JO - Journal of Physical Chemistry Letters
JF - Journal of Physical Chemistry Letters
IS - 30
ER -