CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications

T. C. Chang*, T. M. Tsai, Po-Tsun Liu, C. W. Chen, S. T. Yan, H. Aoki, Y. C. Chang, Tseung-Yuen Tseng

*此作品的通信作者

研究成果: Conference article同行評審

15 引文 斯高帕斯(Scopus)

摘要

In this article, we investigated the impact of chemical mechanical polishing (CMP) on an ultra low dielectric constant (ultra low-k) material Porous-Polysilazane (PPSZ) with slurries of metal polishing during interconnect manufacture process. Since the CMP processing of metals such as TaN and Cu are inevitable steps for interconnect fabrication, we have utilized two types of slurries (marked as TaN and Cu slurries) to evaluate their effects on the dielectric properties of PPSZ films. Electrical and material analyses have shown surface planarity and dielectric properties of PPSZ films will not be degraded during these metal CMP processes. This indicates that the ultra low-k PPSZ films are promising for inter-level dielectric (ILD) applications in ultra large-scale integrated circuits (ULSI) technology.

原文English
頁(從 - 到)524-530
頁數7
期刊Thin Solid Films
447-448
DOIs
出版狀態Published - 30 1月 2004
事件Proceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
持續時間: 28 4月 20022 5月 2002

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