CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications

T. C. Chang; T. M. Tsai; Po-Tsun Liu; C. W. Chen; S. T. Yan; H. Aoki; Y. C. Chang; Tseung-Yuen Tseng

doi:10.1149/1.1697907

CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications

T. C. Chang^*, T. M. Tsai, Po-Tsun Liu, C. W. Chen, S. T. Yan, H. Aoki, Y. C. Chang, Tseung-Yuen Tseng

^*此作品的通信作者

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

The effect of oxygen plasma treatment on methylsilsesquiazane (MSZ) dielectric was investigated for chemical mechanical planarization (CMP) process. Oxygen plasma treatment was implemented before CMP. Experimental results have shown that the polishing rate of MSZ film with O₂ plasma pretreatment is increased as much as two order of magnitude more than that of MSZ without O₂ plasma pretreatment. Moreover, the electrical properties of post-CMP MSZ are close to those of an as-cured MSZ. These results indicate that the modified surfaces resulting from O₂ plasma treatment increase the polishing rate of MSZ. After polishing, the MSZ film still maintains a low-k quality.

原文	English
頁（從 - 到）	G122-G124
期刊	Electrochemical and Solid-State Letters
卷	7
發行號	6
DOIs	https://doi.org/10.1149/1.1697907
出版狀態	Published - 2004

存取文件

10.1149/1.1697907

其它文件與鏈接

Link to publication in Scopus

引用此

@article{0bb19a53f80f47f3b20858d8b2627cff,

title = "CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications",

abstract = "The effect of oxygen plasma treatment on methylsilsesquiazane (MSZ) dielectric was investigated for chemical mechanical planarization (CMP) process. Oxygen plasma treatment was implemented before CMP. Experimental results have shown that the polishing rate of MSZ film with O2 plasma pretreatment is increased as much as two order of magnitude more than that of MSZ without O2 plasma pretreatment. Moreover, the electrical properties of post-CMP MSZ are close to those of an as-cured MSZ. These results indicate that the modified surfaces resulting from O2 plasma treatment increase the polishing rate of MSZ. After polishing, the MSZ film still maintains a low-k quality.",

author = "Chang, {T. C.} and Tsai, {T. M.} and Po-Tsun Liu and Chen, {C. W.} and Yan, {S. T.} and H. Aoki and Chang, {Y. C.} and Tseung-Yuen Tseng",

year = "2004",

doi = "10.1149/1.1697907",

language = "English",

volume = "7",

pages = "G122--G124",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "6",

}

TY - JOUR

T1 - CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications

AU - Chang, T. C.

AU - Tsai, T. M.

AU - Liu, Po-Tsun

AU - Chen, C. W.

AU - Yan, S. T.

AU - Aoki, H.

AU - Chang, Y. C.

AU - Tseng, Tseung-Yuen

PY - 2004

Y1 - 2004

N2 - The effect of oxygen plasma treatment on methylsilsesquiazane (MSZ) dielectric was investigated for chemical mechanical planarization (CMP) process. Oxygen plasma treatment was implemented before CMP. Experimental results have shown that the polishing rate of MSZ film with O2 plasma pretreatment is increased as much as two order of magnitude more than that of MSZ without O2 plasma pretreatment. Moreover, the electrical properties of post-CMP MSZ are close to those of an as-cured MSZ. These results indicate that the modified surfaces resulting from O2 plasma treatment increase the polishing rate of MSZ. After polishing, the MSZ film still maintains a low-k quality.

AB - The effect of oxygen plasma treatment on methylsilsesquiazane (MSZ) dielectric was investigated for chemical mechanical planarization (CMP) process. Oxygen plasma treatment was implemented before CMP. Experimental results have shown that the polishing rate of MSZ film with O2 plasma pretreatment is increased as much as two order of magnitude more than that of MSZ without O2 plasma pretreatment. Moreover, the electrical properties of post-CMP MSZ are close to those of an as-cured MSZ. These results indicate that the modified surfaces resulting from O2 plasma treatment increase the polishing rate of MSZ. After polishing, the MSZ film still maintains a low-k quality.

UR - http://www.scopus.com/inward/record.url?scp=2642564548&partnerID=8YFLogxK

U2 - 10.1149/1.1697907

DO - 10.1149/1.1697907

M3 - Article

AN - SCOPUS:2642564548

SN - 1099-0062

VL - 7

SP - G122-G124

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 6

ER -

CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applications

摘要

存取文件

其它文件與鏈接

指紋

引用此