CMOS technology: High performance ALD HfO2-Al2O3laminate MIM capacitors for RF and mixed signal IC applications

Hang Hu, Shi Jin Ding, H. F. Lim, Chunxiang Zhu, M. F. Li, S. J. Kim, X. F. Yu, J. H. Chen, Y. F. Yong, Byung Jin Cho, D. S.H. Chan, Subhash C. Ruslagi, M. B. Yu, C. H. Tung, Anyan Du, Doan My, P. D. Foo, Albert Chin, Dim Lee Kwong

研究成果: Chapter同行評審

摘要

In this paper, high performance ALD HfO2-Al2O3laminate metal-insulator-metal (MIM) capacitor is demonstrated for the first time with high capacitance density of 12.8 fF/μm2from 10 kHz to 20 GHz, low leakage current of 7.45x10-9A/cm2@2V, low VCC (voltage coefficients of capacitance), and excellent reliability. The superior electrical properties and reliability suggest that the ALD HfO2-Al2O3laminate is a very promising material for MIM capacitors for Si RF and mixed signal IC applications.

原文English
主出版物標題Selected Semiconductor Research
發行者Imperial College Press
頁面323-326
頁數4
ISBN(電子)9781848164079
ISBN(列印)9781848164062
DOIs
出版狀態Published - 1 一月 2011

指紋

深入研究「CMOS technology: High performance ALD HfO<sub>2</sub>-Al<sub>2</sub>O<sub>3</sub>laminate MIM capacitors for RF and mixed signal IC applications」主題。共同形成了獨特的指紋。

引用此