CMOS 0.18 μm standard process capacitive MEMS high-Q oscillator with ultra low-power TIA readout system

F. Y. Kuo, C. F. Chang, Kuei-Ann Wen

    研究成果: Conference article同行評審

    3 引文 斯高帕斯(Scopus)

    摘要

    This paper presents the first monolithic ultra-low power MEMS oscillator that can be manufactured in the ASIC compatible standard CMOS process and monolithically integrated with TIA circuitry. It is designed for high Q value and moderate motional impedance under strict design constraints of the standard fabrication process. A high gain ultra-low power sustaining TIA amplifier circuit is compactly integrated with the resonator structure on a single die for low-power 32 kHz clock generation. The proposed 1.69μW MEMS oscillator can be embedded in common SoC applications monolithically to provide clock sources.

    原文English
    文章編號6985149
    頁(從 - 到)911-914
    頁數4
    期刊Proceedings of IEEE Sensors
    2014-December
    發行號December
    DOIs
    出版狀態Published - 12 12月 2014
    事件13th IEEE SENSORS Conference, SENSORS 2014 - Valencia, Spain
    持續時間: 2 11月 20145 11月 2014

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