This paper presents the first monolithic ultra-low power MEMS oscillator that can be manufactured in the ASIC compatible standard CMOS process and monolithically integrated with TIA circuitry. It is designed for high Q value and moderate motional impedance under strict design constraints of the standard fabrication process. A high gain ultra-low power sustaining TIA amplifier circuit is compactly integrated with the resonator structure on a single die for low-power 32 kHz clock generation. The proposed 1.69μW MEMS oscillator can be embedded in common SoC applications monolithically to provide clock sources.
|頁（從 - 到）||911-914|
|期刊||Proceedings of IEEE Sensors|
|出版狀態||Published - 12 12月 2014|
|事件||13th IEEE SENSORS Conference, SENSORS 2014 - Valencia, Spain|
持續時間: 2 11月 2014 → 5 11月 2014