CMOS 0.18 μm standard process capacitive MEMS high-Q oscillator with ultra low-power TIA readout system

F. Y. Kuo; C. F. Chang; Kuei-Ann Wen

doi:10.1109/ICSENS.2014.6985149

CMOS 0.18 μm standard process capacitive MEMS high-Q oscillator with ultra low-power TIA readout system

F. Y. Kuo, C. F. Chang, Kuei-Ann Wen

研究成果: Conference article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

This paper presents the first monolithic ultra-low power MEMS oscillator that can be manufactured in the ASIC compatible standard CMOS process and monolithically integrated with TIA circuitry. It is designed for high Q value and moderate motional impedance under strict design constraints of the standard fabrication process. A high gain ultra-low power sustaining TIA amplifier circuit is compactly integrated with the resonator structure on a single die for low-power 32 kHz clock generation. The proposed 1.69μW MEMS oscillator can be embedded in common SoC applications monolithically to provide clock sources.

原文	English
文章編號	6985149
頁（從 - 到）	911-914
頁數	4
期刊	Proceedings of IEEE Sensors
卷	2014-December
發行號	December
DOIs	https://doi.org/10.1109/ICSENS.2014.6985149
出版狀態	Published - 12 12月 2014
事件	13th IEEE SENSORS Conference, SENSORS 2014 - Valencia, Spain 持續時間: 2 11月 2014 → 5 11月 2014

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10.1109/ICSENS.2014.6985149

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title = "CMOS 0.18 μm standard process capacitive MEMS high-Q oscillator with ultra low-power TIA readout system",

abstract = "This paper presents the first monolithic ultra-low power MEMS oscillator that can be manufactured in the ASIC compatible standard CMOS process and monolithically integrated with TIA circuitry. It is designed for high Q value and moderate motional impedance under strict design constraints of the standard fabrication process. A high gain ultra-low power sustaining TIA amplifier circuit is compactly integrated with the resonator structure on a single die for low-power 32 kHz clock generation. The proposed 1.69μW MEMS oscillator can be embedded in common SoC applications monolithically to provide clock sources.",

keywords = "CMOS MEMS, Real time clock, Silicon resonator, SoC, Trans-impedance amplifier",

author = "Kuo, {F. Y.} and Chang, {C. F.} and Kuei-Ann Wen",

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doi = "10.1109/ICSENS.2014.6985149",

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AU - Kuo, F. Y.

AU - Chang, C. F.

AU - Wen, Kuei-Ann

PY - 2014/12/12

Y1 - 2014/12/12

N2 - This paper presents the first monolithic ultra-low power MEMS oscillator that can be manufactured in the ASIC compatible standard CMOS process and monolithically integrated with TIA circuitry. It is designed for high Q value and moderate motional impedance under strict design constraints of the standard fabrication process. A high gain ultra-low power sustaining TIA amplifier circuit is compactly integrated with the resonator structure on a single die for low-power 32 kHz clock generation. The proposed 1.69μW MEMS oscillator can be embedded in common SoC applications monolithically to provide clock sources.

AB - This paper presents the first monolithic ultra-low power MEMS oscillator that can be manufactured in the ASIC compatible standard CMOS process and monolithically integrated with TIA circuitry. It is designed for high Q value and moderate motional impedance under strict design constraints of the standard fabrication process. A high gain ultra-low power sustaining TIA amplifier circuit is compactly integrated with the resonator structure on a single die for low-power 32 kHz clock generation. The proposed 1.69μW MEMS oscillator can be embedded in common SoC applications monolithically to provide clock sources.

KW - CMOS MEMS

KW - Real time clock

KW - Silicon resonator

KW - SoC

KW - Trans-impedance amplifier

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DO - 10.1109/ICSENS.2014.6985149

M3 - Conference article

AN - SCOPUS:84931080430

SN - 1930-0395

VL - 2014-December

SP - 911

EP - 914

JO - Proceedings of IEEE Sensors

JF - Proceedings of IEEE Sensors

IS - December

M1 - 6985149

Y2 - 2 November 2014 through 5 November 2014

ER -

CMOS 0.18 μm standard process capacitive MEMS high-Q oscillator with ultra low-power TIA readout system

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