Closed-Loop Gate-Sensing Active Driver IC with Adaptive Delay Compensation Technique for Silicon Carbide Power MOSFETs

Chia Wei Kuo, Ting Wei Wang, Hao Chung Kuo, Chang Ching Tu, Po Hung Chen

研究成果: Conference contribution同行評審

摘要

To permit an optimal tradeoff between current overshoot and switching losses (ELoss) during the switching on of Silicon Carbide power MOSFETs (SiC), an active gate driver (AGD) IC is proposed in this paper. This AGD IC incorporates a gate-sensing technique without the requirement of external sensing components and adjusts the driving capability during turn-on, thereby suppressing current overshoot, oscillation, and electromagnetic interference (EMI) issues. Additionally, the proposed driver IC compensates for circuit propagation delay to enhance effectiveness in suppressing current-induced EMI. The proposed AGD is validated by the 0.18 μm HV BCD process. It achieves a remarkable 40.5% reduction in switching loss compared to the conventional gate driver (CGD) under similar current overshoot conditions. These results underscore the significant advancements the AGD offers in enhancing the efficiency and reliability of SiC-based power management systems.

原文English
主出版物標題2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面462-465
頁數4
ISBN(電子)9798350394825
DOIs
出版狀態Published - 2024
事件36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Bremen, 德國
持續時間: 2 6月 20246 6月 2024

出版系列

名字Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN(列印)1063-6854

Conference

Conference36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024
國家/地區德國
城市Bremen
期間2/06/246/06/24

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