Close Drain-Source Self-Aligned High Electron Mobility Transistors

N. H. Sheng, Mau-Chung Chang, C. P. Lee, D. L. Miller, R. T. Chen

    研究成果: Article同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    A new self-aligned process for high-electron mobility transistors has been developed. This process uses a photoresist dummy gate to self-align the ohmic contacts. The resulting structure has very closely spaced source and drain. For 1-μm gate transistors, device transconductances as high as 320 ms/mm have been achieved at room temperature.

    原文English
    頁(從 - 到)11-12
    頁數2
    期刊IEEE Electron Device Letters
    7
    發行號1
    DOIs
    出版狀態Published - 1 1月 1986

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