摘要
This work optimizes dynamic characteristic of a new amorphous silicon gate (ASG) driver circuit using multi-objective evolutionary algorithm (MOEA) and hydrogenated amorphous silicon (a-Si:H) TFT circuit simulator running on the platform of unified optimization framework (UOF). The ASG driver circuit consisting of 17 a-Si:H TFTs is optimized for the given specifications of the fall time {<} 3 \mu s and the ripple voltage {<} -9 V while simultaneously minimizing the total layout area. More than 50% reductions on the fall time of the ASG driver circuit have been achieved by using the optimization methodology together with a novel three-level clock driving technique. The measured results of the fabricated sample using the optimized parameters confirm the practicability of reported MOEA methodology.
原文 | English |
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文章編號 | 7006637 |
頁(從 - 到) | 640-645 |
頁數 | 6 |
期刊 | IEEE/OSA Journal of Display Technology |
卷 | 11 |
發行號 | 8 |
DOIs | |
出版狀態 | Published - 1 8月 2015 |