Graphene layers were grown by chemical vapour deposition (CVD) on Si wafers covered by a SiO 2 substrate layer and a Ni interlayer, and on copper and nickel foil. The obtained graphene layers were characterized by Raman spectroscopy. The films grown on SiO 2 /Ni substrate and Ni foil comprise mainly multilayer defect-rich graphene, while those on Cu foil exhibit the spectroscopic fingerprint of relatively defect-free single-layer graphene due to the low carbon solubility in copper and the suitably chosen substrate position in a quasiclosed volume. Optimal growth conditions and the nature of defects in the layers are discussed.
|Journal of Physics: Conference Series
|Published - 1 1月 2014
|18th International School on Condensed Matter Physics - Challenges of Nanoscale Science: Theory, Materials, Applications, ISCMP 2014 - Varna, Bulgaria
持續時間: 1 9月 2014 → 6 9月 2014