Chemical vapour deposition growth of graphene layers on metal substrates

Y. C. Lai; S. C. Yu; P. M. Rafailov; E. Vlaikova; S. Valkov; S. Petrov; J. Koprinarova; P. Terziyska; V. Marinova; Shiuan-Huei Lin; Pei-Chen Yu; G. C. Chi; D. Dimitrov; M. M. Gospodinov

doi:10.1088/1742-6596/558/1/012059

Chemical vapour deposition growth of graphene layers on metal substrates

Y. C. Lai^*, S. C. Yu, P. M. Rafailov, E. Vlaikova, S. Valkov, S. Petrov, J. Koprinarova, P. Terziyska, V. Marinova, Shiuan-Huei Lin, Pei-Chen Yu, G. C. Chi, D. Dimitrov, M. M. Gospodinov

^*此作品的通信作者

研究成果: Conference article › 同行評審

10 引文斯高帕斯（Scopus）

摘要

Graphene layers were grown by chemical vapour deposition (CVD) on Si wafers covered by a SiO ₂ substrate layer and a Ni interlayer, and on copper and nickel foil. The obtained graphene layers were characterized by Raman spectroscopy. The films grown on SiO ₂ /Ni substrate and Ni foil comprise mainly multilayer defect-rich graphene, while those on Cu foil exhibit the spectroscopic fingerprint of relatively defect-free single-layer graphene due to the low carbon solubility in copper and the suitably chosen substrate position in a quasiclosed volume. Optimal growth conditions and the nature of defects in the layers are discussed.

原文	English
文章編號	012059
期刊	Journal of Physics: Conference Series
卷	558
發行號	1
DOIs	https://doi.org/10.1088/1742-6596/558/1/012059
出版狀態	Published - 1 1月 2014
事件	18th International School on Condensed Matter Physics - Challenges of Nanoscale Science: Theory, Materials, Applications, ISCMP 2014 - Varna, Bulgaria 持續時間: 1 9月 2014 → 6 9月 2014

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Lai, Y. C., Yu, S. C., Rafailov, P. M., Vlaikova, E., Valkov, S., Petrov, S., Koprinarova, J., Terziyska, P., Marinova, V., Lin, S.-H., Yu, P.-C., Chi, G. C., Dimitrov, D., & Gospodinov, M. M. (2014). Chemical vapour deposition growth of graphene layers on metal substrates. Journal of Physics: Conference Series, 558(1), 文章 012059. https://doi.org/10.1088/1742-6596/558/1/012059

@article{5d97bd2faa1944cb9ca0cc7b75b84fcf,

title = "Chemical vapour deposition growth of graphene layers on metal substrates",

abstract = " Graphene layers were grown by chemical vapour deposition (CVD) on Si wafers covered by a SiO 2 substrate layer and a Ni interlayer, and on copper and nickel foil. The obtained graphene layers were characterized by Raman spectroscopy. The films grown on SiO 2 /Ni substrate and Ni foil comprise mainly multilayer defect-rich graphene, while those on Cu foil exhibit the spectroscopic fingerprint of relatively defect-free single-layer graphene due to the low carbon solubility in copper and the suitably chosen substrate position in a quasiclosed volume. Optimal growth conditions and the nature of defects in the layers are discussed. ",

author = "Lai, {Y. C.} and Yu, {S. C.} and Rafailov, {P. M.} and E. Vlaikova and S. Valkov and S. Petrov and J. Koprinarova and P. Terziyska and V. Marinova and Shiuan-Huei Lin and Pei-Chen Yu and Chi, {G. C.} and D. Dimitrov and Gospodinov, {M. M.}",

year = "2014",

month = jan,

day = "1",

doi = "10.1088/1742-6596/558/1/012059",

language = "English",

volume = "558",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

note = "18th International School on Condensed Matter Physics - Challenges of Nanoscale Science: Theory, Materials, Applications, ISCMP 2014 ; Conference date: 01-09-2014 Through 06-09-2014",

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TY - JOUR

T1 - Chemical vapour deposition growth of graphene layers on metal substrates

AU - Lai, Y. C.

AU - Yu, S. C.

AU - Rafailov, P. M.

AU - Vlaikova, E.

AU - Valkov, S.

AU - Petrov, S.

AU - Koprinarova, J.

AU - Terziyska, P.

AU - Marinova, V.

AU - Lin, Shiuan-Huei

AU - Yu, Pei-Chen

AU - Chi, G. C.

AU - Dimitrov, D.

AU - Gospodinov, M. M.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Graphene layers were grown by chemical vapour deposition (CVD) on Si wafers covered by a SiO 2 substrate layer and a Ni interlayer, and on copper and nickel foil. The obtained graphene layers were characterized by Raman spectroscopy. The films grown on SiO 2 /Ni substrate and Ni foil comprise mainly multilayer defect-rich graphene, while those on Cu foil exhibit the spectroscopic fingerprint of relatively defect-free single-layer graphene due to the low carbon solubility in copper and the suitably chosen substrate position in a quasiclosed volume. Optimal growth conditions and the nature of defects in the layers are discussed.

AB - Graphene layers were grown by chemical vapour deposition (CVD) on Si wafers covered by a SiO 2 substrate layer and a Ni interlayer, and on copper and nickel foil. The obtained graphene layers were characterized by Raman spectroscopy. The films grown on SiO 2 /Ni substrate and Ni foil comprise mainly multilayer defect-rich graphene, while those on Cu foil exhibit the spectroscopic fingerprint of relatively defect-free single-layer graphene due to the low carbon solubility in copper and the suitably chosen substrate position in a quasiclosed volume. Optimal growth conditions and the nature of defects in the layers are discussed.

UR - http://www.scopus.com/inward/record.url?scp=84915822663&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/558/1/012059

DO - 10.1088/1742-6596/558/1/012059

M3 - Conference article

AN - SCOPUS:84915822663

SN - 1742-6588

VL - 558

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012059

T2 - 18th International School on Condensed Matter Physics - Challenges of Nanoscale Science: Theory, Materials, Applications, ISCMP 2014

Y2 - 1 September 2014 through 6 September 2014

ER -

Chemical vapour deposition growth of graphene layers on metal substrates

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