Charging-damage-free and precise dielectric etching in pulsed C2F4/CF3I plasma

H. Ohtake; S. Samukawa

doi:10.1116/1.1479737

Charging-damage-free and precise dielectric etching in pulsed C₂F₄/CF₃I plasma

H. Ohtake^*, S. Samukawa

^*此作品的通信作者

電信工程研究所

研究成果: Conference article › 同行評審

19 引文斯高帕斯（Scopus）

摘要

The charging-damage-free φ0.05 μm SiO₂ contact etching in a pulsed C₂F₄/CF₃I plasma was performed. The SiO₂ etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO₂ etching.

原文	English
頁（從 - 到）	1026-1030
頁數	5
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	20
發行號	3
DOIs	https://doi.org/10.1116/1.1479737
出版狀態	Published - 5月 2002
事件	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, 美國持續時間: 1 10月 2001 → 3 10月 2001

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@article{0a3f4dff6a854ad48db3b82abb383557,

title = "Charging-damage-free and precise dielectric etching in pulsed C2F4/CF3I plasma",

abstract = "The charging-damage-free φ0.05 μm SiO2 contact etching in a pulsed C2F4/CF3I plasma was performed. The SiO2 etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO2 etching.",

author = "H. Ohtake and S. Samukawa",

year = "2002",

month = may,

doi = "10.1116/1.1479737",

language = "English",

volume = "20",

pages = "1026--1030",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

note = "20th North American Conference on Molecular Beam Epitaxy ; Conference date: 01-10-2001 Through 03-10-2001",

}

TY - JOUR

T1 - Charging-damage-free and precise dielectric etching in pulsed C2F4/CF3I plasma

AU - Ohtake, H.

AU - Samukawa, S.

PY - 2002/5

Y1 - 2002/5

N2 - The charging-damage-free φ0.05 μm SiO2 contact etching in a pulsed C2F4/CF3I plasma was performed. The SiO2 etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO2 etching.

AB - The charging-damage-free φ0.05 μm SiO2 contact etching in a pulsed C2F4/CF3I plasma was performed. The SiO2 etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO2 etching.

UR - http://www.scopus.com/inward/record.url?scp=0035998532&partnerID=8YFLogxK

U2 - 10.1116/1.1479737

DO - 10.1116/1.1479737

M3 - Conference article

AN - SCOPUS:0035998532

SN - 1071-1023

VL - 20

SP - 1026

EP - 1030

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 20th North American Conference on Molecular Beam Epitaxy

Y2 - 1 October 2001 through 3 October 2001

ER -

Charging-damage-free and precise dielectric etching in pulsed C2F4/CF3I plasma

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Charging-damage-free and precise dielectric etching in pulsed C₂F₄/CF₃I plasma