Charging-damage-free and precise dielectric etching in pulsed C2F4/CF3I plasma

H. Ohtake*, S. Samukawa

*此作品的通信作者

研究成果: Conference article同行評審

19 引文 斯高帕斯(Scopus)

摘要

The charging-damage-free φ0.05 μm SiO2 contact etching in a pulsed C2F4/CF3I plasma was performed. The SiO2 etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO2 etching.

原文English
頁(從 - 到)1026-1030
頁數5
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
20
發行號3
DOIs
出版狀態Published - 5月 2002
事件20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States
持續時間: 1 10月 20013 10月 2001

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