Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

C. D. Young*, A. Kerber, Tuo-Hung Hou, E. Cartier, G. A. Brown, G. Bersuker, Y. Kim, C. Lim, J. Gutt, P. Lysaght, J. Bennett, C. H. Lee, S. Gopalan, M. Gardner, P. Zeitzoff, G. Groeseneken, R. W. Murto, H. R. Huff

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7 引文 斯高帕斯(Scopus)

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Engineering & Materials Science