Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

C. D. Young; A. Kerber; Tuo-Hung Hou; E. Cartier; G. A. Brown; G. Bersuker; Y. Kim; C. Lim; J. Gutt; P. Lysaght; J. Bennett; C. H. Lee; S. Gopalan; M. Gardner; P. Zeitzoff; G. Groeseneken; R. W. Murto; H. R. Huff

Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

C. D. Young^*, A. Kerber, Tuo-Hung Hou, E. Cartier, G. A. Brown, G. Bersuker, Y. Kim, C. Lim, J. Gutt, P. Lysaght, J. Bennett, C. H. Lee, S. Gopalan, M. Gardner, P. Zeitzoff, G. Groeseneken, R. W. Murto, H. R. Huff

^*此作品的通信作者

電子研究所

研究成果: Paper › 同行評審

7 引文斯高帕斯（Scopus）

摘要

Interfacial and bulk high-K properties of HfSi_xO_y (20% SiO₂) gate dielectrics are discussed with focus on the device performance (i.e., mobility). Samples of this composition were deposited at 2 Torr and 4 Torr and were subjected to various post deposition anneal (PDA) ambients and temperatures. 4 Torr silicates exhibit a higher mobility (peak and high field) than 2 Torr silicates that were subjected to the same post deposition processes. Fixed-amplitude charge pumping (CP) gives low interface state densities for both depositions indicating good interface passivation, whereas variable-amplitude CP shows large trap densities in the bulk of the high-κ layer. Using fast transient measurements and analysis, trapped charge and free-carrier mobility can be extracted allowing characterization of the "trap fee" mobility, which is quite close to the universal electron mobility curve in the high field regime for process conditions of interest.

原文	English
頁面	347-359
頁數	13
出版狀態	Published - 10月 2003
事件	Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., 美國持續時間: 12 10月 2003 → 16 10月 2003

Conference

Conference	Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
國家/地區	美國
城市	Orlando, FL.
期間	12/10/03 → 16/10/03

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Young, C. D., Kerber, A., Hou, T.-H., Cartier, E., Brown, G. A., Bersuker, G., Kim, Y., Lim, C., Gutt, J., Lysaght, P., Bennett, J., Lee, C. H., Gopalan, S., Gardner, M., Zeitzoff, P., Groeseneken, G., Murto, R. W., & Huff, H. R. (2003). Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures. 347-359. 論文發表於 Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., 美國.

Young, C. D. ; Kerber, A. ; Hou, Tuo-Hung 等. / Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures. 論文發表於 Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., 美國.13 p.

@conference{f16c2ab660a749f18eb25fdd0450c8f9,

title = "Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures",

abstract = "Interfacial and bulk high-K properties of HfSixOy (20% SiO2) gate dielectrics are discussed with focus on the device performance (i.e., mobility). Samples of this composition were deposited at 2 Torr and 4 Torr and were subjected to various post deposition anneal (PDA) ambients and temperatures. 4 Torr silicates exhibit a higher mobility (peak and high field) than 2 Torr silicates that were subjected to the same post deposition processes. Fixed-amplitude charge pumping (CP) gives low interface state densities for both depositions indicating good interface passivation, whereas variable-amplitude CP shows large trap densities in the bulk of the high-κ layer. Using fast transient measurements and analysis, trapped charge and free-carrier mobility can be extracted allowing characterization of the {"}trap fee{"} mobility, which is quite close to the universal electron mobility curve in the high field regime for process conditions of interest.",

author = "Young, {C. D.} and A. Kerber and Tuo-Hung Hou and E. Cartier and Brown, {G. A.} and G. Bersuker and Y. Kim and C. Lim and J. Gutt and P. Lysaght and J. Bennett and Lee, {C. H.} and S. Gopalan and M. Gardner and P. Zeitzoff and G. Groeseneken and Murto, {R. W.} and Huff, {H. R.}",

year = "2003",

month = oct,

language = "English",

pages = "347--359",

note = "Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues ; Conference date: 12-10-2003 Through 16-10-2003",

}

Young, CD, Kerber, A, Hou, T-H, Cartier, E, Brown, GA, Bersuker, G, Kim, Y, Lim, C, Gutt, J, Lysaght, P, Bennett, J, Lee, CH, Gopalan, S, Gardner, M, Zeitzoff, P, Groeseneken, G, Murto, RW & Huff, HR 2003, 'Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures', 論文發表於 Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., 美國, 12/10/03 - 16/10/03 頁 347-359.

Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures. / Young, C. D.; Kerber, A.; Hou, Tuo-Hung 等.
2003. 347-359 論文發表於 Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., 美國.

研究成果: Paper › 同行評審

TY - CONF

T1 - Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

AU - Young, C. D.

AU - Kerber, A.

AU - Hou, Tuo-Hung

AU - Cartier, E.

AU - Brown, G. A.

AU - Bersuker, G.

AU - Kim, Y.

AU - Lim, C.

AU - Gutt, J.

AU - Lysaght, P.

AU - Bennett, J.

AU - Lee, C. H.

AU - Gopalan, S.

AU - Gardner, M.

AU - Zeitzoff, P.

AU - Groeseneken, G.

AU - Murto, R. W.

AU - Huff, H. R.

PY - 2003/10

Y1 - 2003/10

N2 - Interfacial and bulk high-K properties of HfSixOy (20% SiO2) gate dielectrics are discussed with focus on the device performance (i.e., mobility). Samples of this composition were deposited at 2 Torr and 4 Torr and were subjected to various post deposition anneal (PDA) ambients and temperatures. 4 Torr silicates exhibit a higher mobility (peak and high field) than 2 Torr silicates that were subjected to the same post deposition processes. Fixed-amplitude charge pumping (CP) gives low interface state densities for both depositions indicating good interface passivation, whereas variable-amplitude CP shows large trap densities in the bulk of the high-κ layer. Using fast transient measurements and analysis, trapped charge and free-carrier mobility can be extracted allowing characterization of the "trap fee" mobility, which is quite close to the universal electron mobility curve in the high field regime for process conditions of interest.

AB - Interfacial and bulk high-K properties of HfSixOy (20% SiO2) gate dielectrics are discussed with focus on the device performance (i.e., mobility). Samples of this composition were deposited at 2 Torr and 4 Torr and were subjected to various post deposition anneal (PDA) ambients and temperatures. 4 Torr silicates exhibit a higher mobility (peak and high field) than 2 Torr silicates that were subjected to the same post deposition processes. Fixed-amplitude charge pumping (CP) gives low interface state densities for both depositions indicating good interface passivation, whereas variable-amplitude CP shows large trap densities in the bulk of the high-κ layer. Using fast transient measurements and analysis, trapped charge and free-carrier mobility can be extracted allowing characterization of the "trap fee" mobility, which is quite close to the universal electron mobility curve in the high field regime for process conditions of interest.

UR - http://www.scopus.com/inward/record.url?scp=3042855582&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:3042855582

SP - 347

EP - 359

T2 - Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues

Y2 - 12 October 2003 through 16 October 2003

ER -

Young CD, Kerber A, Hou TH, Cartier E, Brown GA, Bersuker G 等. Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures. 2003. 論文發表於 Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues, Orlando, FL., 美國.

Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

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