Charge trapping and electron mobility degradation in MOCVD hafnium silicate gate dielectric stack structures

C. D. Young*, A. Kerber, Tuo-Hung Hou, E. Cartier, G. A. Brown, G. Bersuker, Y. Kim, C. Lim, J. Gutt, P. Lysaght, J. Bennett, C. H. Lee, S. Gopalan, M. Gardner, P. Zeitzoff, G. Groeseneken, R. W. Murto, H. R. Huff

*此作品的通信作者

研究成果: Paper同行評審

7 引文 斯高帕斯(Scopus)

摘要

Interfacial and bulk high-K properties of HfSixOy (20% SiO2) gate dielectrics are discussed with focus on the device performance (i.e., mobility). Samples of this composition were deposited at 2 Torr and 4 Torr and were subjected to various post deposition anneal (PDA) ambients and temperatures. 4 Torr silicates exhibit a higher mobility (peak and high field) than 2 Torr silicates that were subjected to the same post deposition processes. Fixed-amplitude charge pumping (CP) gives low interface state densities for both depositions indicating good interface passivation, whereas variable-amplitude CP shows large trap densities in the bulk of the high-κ layer. Using fast transient measurements and analysis, trapped charge and free-carrier mobility can be extracted allowing characterization of the "trap fee" mobility, which is quite close to the universal electron mobility curve in the high field regime for process conditions of interest.

原文English
頁面347-359
頁數13
出版狀態Published - 10月 2003
事件Physics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues - Orlando, FL., United States
持續時間: 12 10月 200316 10月 2003

Conference

ConferencePhysics and Technology of High-k Gate Dielectrics II - Proceedings of the Intenational Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
國家/地區United States
城市Orlando, FL.
期間12/10/0316/10/03

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