Charge pumping technique for the evaluation of plasma induced edge damage in shallow S/D extension thin gate oxide NMOSFET's

Steve S. Chung*, S. J. Chen, H. L. Kao, S. J. Luo, Horng-Chih Lin

*此作品的通信作者

研究成果: Conference article同行評審

4 引文 斯高帕斯(Scopus)

摘要

Plasma etching of poly-silicon in an MOS device during the gate definition induces the plasma edge damage at the corner of the gate. In this paper, we address the interaction between edge damage, antenna effect and hot carrier degradation and their impact on device reliability. An accurate charge pumping profiling technique has been proposed to characterize the resulting damage. A three-phase edge damage process has been proposed. It is shown that interface trap degradation is the dominant impact of the plasma induced edge damage. The edge damage will enhance the short channel device HC degradation under long-term circuit operation.

原文English
頁(從 - 到)389-393
頁數5
期刊Annual Proceedings - Reliability Physics (Symposium)
DOIs
出版狀態Published - 2000
事件38th IEEE International Reliability Physics Symposium - San Jose, CA, USA
持續時間: 10 4月 200013 4月 2000

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