Characterized of ultrathin oxynitride (18-21 Å) gate dielectrics by NH 3 nitridation and N 2O RTA treatment

Tung Ming Pan; Tan Fu Lei; Huang Chun Wen; Tien-Sheng Chao

doi:10.1109/16.918238

Characterized of ultrathin oxynitride (18-21 Å) gate dielectrics by NH ₃ nitridation and N ₂O RTA treatment

Tung Ming Pan^*, Tan Fu Lei, Huang Chun Wen, Tien-Sheng Chao

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

16 引文斯高帕斯（Scopus）

摘要

In this paper, we developed a new method to grow robust ultrathin oxynitride (E _OT = 18 Å) film with effective dielectric constant of 7.15. By NH ₃-nitridation of Si substrate, grown ultrathin Si ₃N ₄ with N ₂O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.

原文	English
頁（從 - 到）	907-912
頁數	6
期刊	IEEE Transactions on Electron Devices
卷	48
發行號	5
DOIs	https://doi.org/10.1109/16.918238
出版狀態	Published - 1 5月 2001

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10.1109/16.918238

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title = "Characterized of ultrathin oxynitride (18-21 {\AA}) gate dielectrics by NH 3 nitridation and N 2O RTA treatment",

abstract = "In this paper, we developed a new method to grow robust ultrathin oxynitride (E OT = 18 {\AA}) film with effective dielectric constant of 7.15. By NH 3-nitridation of Si substrate, grown ultrathin Si 3N 4 with N 2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.",

keywords = "N O, NH, Nitridation, Oxynitride, Rapid thermal annealing (RTA), Si N",

author = "Pan, {Tung Ming} and Lei, {Tan Fu} and Wen, {Huang Chun} and Tien-Sheng Chao",

year = "2001",

month = may,

day = "1",

doi = "10.1109/16.918238",

language = "English",

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AU - Pan, Tung Ming

AU - Lei, Tan Fu

AU - Wen, Huang Chun

AU - Chao, Tien-Sheng

PY - 2001/5/1

Y1 - 2001/5/1

N2 - In this paper, we developed a new method to grow robust ultrathin oxynitride (E OT = 18 Å) film with effective dielectric constant of 7.15. By NH 3-nitridation of Si substrate, grown ultrathin Si 3N 4 with N 2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.

AB - In this paper, we developed a new method to grow robust ultrathin oxynitride (E OT = 18 Å) film with effective dielectric constant of 7.15. By NH 3-nitridation of Si substrate, grown ultrathin Si 3N 4 with N 2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing. In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.

KW - N O

KW - NH

KW - Nitridation

KW - Oxynitride

KW - Rapid thermal annealing (RTA)

KW - Si N

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DO - 10.1109/16.918238

M3 - Article

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JO - Ieee Transactions On Electron Devices

JF - Ieee Transactions On Electron Devices

IS - 5

ER -

Characterized of ultrathin oxynitride (18-21 Å) gate dielectrics by NH 3 nitridation and N 2O RTA treatment

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Characterized of ultrathin oxynitride (18-21 Å) gate dielectrics by NH ₃ nitridation and N ₂O RTA treatment