Characterizations of flash memory on glass using LTPS TFT with an ultra-low-roughness poly-Si/SiO2 interface

Hung Tse Chen*, Po Hao Tsai, Yu Cheng Chen, Chi Lin Chen, Jia Xing Lin, Jason C. Chang, C. W. Chen, H. Y. Lu, H. H. Wu, Po-Tsun Liu, T. C. Chang

*此作品的通信作者

研究成果: Conference article同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this paper, flash memories using low temperature poly-Si thin-film transistors (LTPS-TFTs) with oxide-nitride-oxide (ONO) stack structure on glass was studied and fabricated. The surface roughness Rms of poly-Si implemented in this work is less than 20Å. For 10 ms program/erase (P/E) pulse time, the threshold voltage window of memory is 1.5V and it maintains a wide threshold voltage window after 104 P/E cycles.

原文English
文章編號27.2
頁(從 - 到)1152-1155
頁數4
期刊Digest of Technical Papers - SID International Symposium
36
發行號2
DOIs
出版狀態Published - 5月 2005
事件2005 SID International Symposium - Boston, MA, United States
持續時間: 25 5月 200527 5月 2005

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