摘要
In this paper, flash memories using low temperature poly-Si thin-film transistors (LTPS-TFTs) with oxide-nitride-oxide (ONO) stack structure on glass was studied and fabricated. The surface roughness Rms of poly-Si implemented in this work is less than 20Å. For 10 ms program/erase (P/E) pulse time, the threshold voltage window of memory is 1.5V and it maintains a wide threshold voltage window after 104 P/E cycles.
原文 | English |
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文章編號 | 27.2 |
頁(從 - 到) | 1152-1155 |
頁數 | 4 |
期刊 | Digest of Technical Papers - SID International Symposium |
卷 | 36 |
發行號 | 2 |
DOIs | |
出版狀態 | Published - 5月 2005 |
事件 | 2005 SID International Symposium - Boston, MA, 美國 持續時間: 25 5月 2005 → 27 5月 2005 |