Electrical characteristics of thermal silicon dioxides with thickness in the range of 30-450 angstrom have been investigated using MOS capacitors and transistors. The general properties of thin gate-oxide FETs, including subthreshold swings, channel mobilities, and linear transconductances, have been examined. A simple model based on a critical electron energy for trap generation and electron scattering inside the dielectric film is proposed to explain the thickness dependence of bulk and interface charge trapping under high field/current stress in thin oxides.
|頁（從 - 到）||153-157|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1 12月 1984|