CHARACTERIZATION OF VERY THIN GATE-OXIDE MOS DEVICES.

M. S. Liang*, J. Y. Choi, P. K. Ko, Chen-Ming Hu

*此作品的通信作者

研究成果: Conference article同行評審

11 引文 斯高帕斯(Scopus)

摘要

Electrical characteristics of thermal silicon dioxides with thickness in the range of 30-450 angstrom have been investigated using MOS capacitors and transistors. The general properties of thin gate-oxide FETs, including subthreshold swings, channel mobilities, and linear transconductances, have been examined. A simple model based on a critical electron energy for trap generation and electron scattering inside the dielectric film is proposed to explain the thickness dependence of bulk and interface charge trapping under high field/current stress in thin oxides.

原文English
頁(從 - 到)153-157
頁數5
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1 12月 1984

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