Characterization of the Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition

T. G. Jung*, C. Y. Chang, C. S. Liu, T. C. Chang, Horng-Chih Lin, W. C. Tsai, G. W. Huang, L. P. Chen

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The unipolar Si/SiGe heterojunction diode grown by ultrahigh vacuum chemical vapor deposition at 550°C is demonstrated. The dark current density measured at 77 K is (2.5±0.1)×10-7 A/cm2 for the barrier height of 176±8 meV, at a reverse bias of 1 V. The barrier heights are measured from the activation analysis of the saturation current and compared to the theoretical values. The barrier height decreases as the thickness of the SiGe strained layer exceeds the critical thickness.

原文English
頁(從 - 到)4921-4923
頁數3
期刊Journal of Applied Physics
76
發行號8
DOIs
出版狀態Published - 1 12月 1994

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