Characterization of SOA in time domain and the improvement techniques for using in high-voltage integrated circuits

Wen Yi Chen*, Ming-Dou Ker

*此作品的通信作者

    研究成果: Review article同行評審

    22 引文 斯高帕斯(Scopus)

    摘要

    Safe operating area (SOA) in power semiconductors is one of the most important factors affecting device reliability. The SOA region of power MOSFETs must be well characterized for using in circuit design to meet the specification of applications, particularly including the time domain of circuit operations. In this paper, the characterization of SOA in the time domain is performed with the experimental measurement on silicon devices, and the useful techniques to improve SOA of power MOSFETs for using in high-voltage integrated circuits are overviewed.

    原文English
    文章編號6151077
    頁(從 - 到)382-390
    頁數9
    期刊IEEE Transactions on Device and Materials Reliability
    12
    發行號2
    DOIs
    出版狀態Published - 2012

    指紋

    深入研究「Characterization of SOA in time domain and the improvement techniques for using in high-voltage integrated circuits」主題。共同形成了獨特的指紋。

    引用此