Characterization of self-assembled InAs quantum dots with InAlAsInGaAs strain-reduced layers by photoluminescence spectroscopy

K. P. Chang*, S. L. Yang, D. S. Chuu, R. S. Hsiao, Jenn-Fang Chen, L. Wei, J. S. Wang, J. Y. Chi

*此作品的通信作者

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23 引文 斯高帕斯（Scopus）

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Engineering

Material Science