Characterization of self-assembled InAs quantum dots with InAlAsInGaAs strain-reduced layers by photoluminescence spectroscopy

K. P. Chang*, S. L. Yang, D. S. Chuu, R. S. Hsiao, Jenn-Fang Chen, L. Wei, J. S. Wang, J. Y. Chi

*此作品的通信作者

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

The optoelectronic characteristics of self-assembled InAs quantum dots (QDs) with strain-reduced layers (SRLs) were investigated using photoluminescence (PL) spectroscopy. Various SRLs that combine In0.14 Al0.86 As and In0.14 Ga0.86 As with the same total thickness were examined to ascertain their confining effect on carriers in InAs QDs. The emission wavelength is blueshifted as the thickness of InAlAs is increased. The energy separation between the ground state and the first excited state of QDs with InAlAs SRLs greatly exceeds that of QDs with InGaAs SRLs. Atomic force microscopic images and PL spectra of the QD samples demonstrated that high-quality InAs QDs with long emission wavelengths and a large energy separation can be generated by growing a low-temperature, thin InAlAs SRL onto self-assembled QDs.

原文English
文章編號083511
期刊Journal of Applied Physics
97
發行號8
DOIs
出版狀態Published - 27 4月 2005

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