Characterization of porous silicate for ultra-low k dielectric application

Po-Tsun Liu*, T. C. Chang, K. C. Hsu, Tseung-Yuen Tseng, L. M. Chen, C. J. Wang, S. M. Sze

*此作品的通信作者

研究成果: Article同行評審

27 引文 斯高帕斯(Scopus)

摘要

Thermal stability of a porous low-k film is a critical issue for application consideration in the back-end-of-line. In this study, thermal stability of the porous silicate has been investigated by changing the thermal processing temperatures. Experimental results have shown that the dielectric constant of the porous silicate still remains below 2.0 after thermal processing at 500

原文English
頁(從 - 到)1-6
頁數6
期刊Thin Solid Films
414
發行號1
DOIs
出版狀態Published - 1 7月 2002

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