@article{4a4d0eb2eb1744c5903ba1665c358342,
title = "Characterization of porous silicate for ultra-low k dielectric application",
abstract = "Thermal stability of a porous low-k film is a critical issue for application consideration in the back-end-of-line. In this study, thermal stability of the porous silicate has been investigated by changing the thermal processing temperatures. Experimental results have shown that the dielectric constant of the porous silicate still remains below 2.0 after thermal processing at 500",
keywords = "Dielectric constant, Porous silicate films, Thermal stability",
author = "Po-Tsun Liu and Chang, {T. C.} and Hsu, {K. C.} and Tseung-Yuen Tseng and Chen, {L. M.} and Wang, {C. J.} and Sze, {S. M.}",
year = "2002",
month = jul,
day = "1",
doi = "10.1016/S0040-6090(02)00423-6",
language = "English",
volume = "414",
pages = "1--6",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",
}