Characterization of p-type InxGa1-xN grown by metalorganic chemical vapor deposition

T. C. Wen*, Wei-I Lee, J. K. Sheu, G. C. Chi

*此作品的通信作者

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

This study investigates the electrical and optical characteristics of Mg-doped InxGa1-xN grown by metalorganic chemical vapor deposition. All the Mg-doped InxGa1-xN layers show p-type conduction after thermal annealing. Room temperature (RT) carrier concentration increases exponentially with an In mole fraction increase. The highest hole concentration of bulk Mg-doped InxGa1-xN is 1.65 × 1019 cm-3. Also, the RT photoluminescence (PL) spectra of Mg-related emissions in InxGa1-xN are displayed. However, the PL peak intensity becomes weak after the post-annealing process on Mg-doped InxGa1-xN. This degradation might be created by the surface dissociation during the post-annealing process.

原文English
頁(從 - 到)427-430
頁數4
期刊Solid-State Electronics
45
發行號3
DOIs
出版狀態Published - 1 3月 2001

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