摘要
Wurtzite-structure MgxZn1 - xO materials with five different compositions of x from 0 to 0.14 were grown on sapphire substrates by metalorganic chemical vapor deposition. It was found that increasing Mg content in the MgxZn1 - xO not only increased the band gap energy of the film but was also beneficial to the epitaxial growth of p-type Mg xZn1 - xO without using any doping sources. In addition, the combined ultraviolet photoluminescence (PL) and Raman scattering spectra were measured with PL-Raman signals obtained together, showing a blue-shift of PL band and variation of resonant Raman multi-order longitudinal optical phonon modes with an increase of Mg content.
原文 | English |
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頁(從 - 到) | 1966-1970 |
頁數 | 5 |
期刊 | Thin Solid Films |
卷 | 519 |
發行號 | 6 |
DOIs | |
出版狀態 | Published - 3 1月 2011 |