Characterization of MgxZn1 - XO thin films grown on sapphire substrates by metalorganic chemical vapor deposition

C. C. Wu, D. S. Wuu, P. R. Lin, T. N. Chen, Ray-Hua Horng, S. L. Ou, Y. L. Tu, C. C. Wei, Z. C. Feng

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)

摘要

Wurtzite-structure MgxZn1 - xO materials with five different compositions of x from 0 to 0.14 were grown on sapphire substrates by metalorganic chemical vapor deposition. It was found that increasing Mg content in the MgxZn1 - xO not only increased the band gap energy of the film but was also beneficial to the epitaxial growth of p-type Mg xZn1 - xO without using any doping sources. In addition, the combined ultraviolet photoluminescence (PL) and Raman scattering spectra were measured with PL-Raman signals obtained together, showing a blue-shift of PL band and variation of resonant Raman multi-order longitudinal optical phonon modes with an increase of Mg content.

原文English
頁(從 - 到)1966-1970
頁數5
期刊Thin Solid Films
519
發行號6
DOIs
出版狀態Published - 3 1月 2011

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