Characterization of LOCOS field oxide on 4H-SiC formed by ar preamorphization ion implantation

Yuan Hung Tseng*, Chung Yu Lin, Bing-Yue Tsui

*此作品的通信作者

    研究成果: Article同行評審

    15 引文 斯高帕斯(Scopus)

    摘要

    In this letter, the electrical properties of local oxidation of silicon (LOCOS) field oxide formed on 4H-SiC are reported. Moreover, unlike the conventional Si LOCOS process, a simpler method based on Ar preamorphization implantation is proposed. In addition to direct characterization of the field oxide, device properties achieved using LOCOS isolation are compared with those achieved using the conventional chemical vapor deposition oxide isolation to clarify the impact of isolation technology. The results of this letterwould be insightful for silicon-carbide-basedverylarge- scale integration technology.

    原文English
    文章編號7911276
    頁(從 - 到)798-801
    頁數4
    期刊IEEE Electron Device Letters
    38
    發行號6
    DOIs
    出版狀態Published - 1 6月 2017

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