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Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories
Y. Y. Chen
*
, T. H. Li, K. T. Kin,
Chao-Hsin Chien
, J. C. Lou
*
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Conference contribution
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引文 斯高帕斯(Scopus)
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Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Flash Memory
100%
High-k Dielectric
100%
Stack Gate
100%
Interpoly Dielectrics
100%
HfO2
50%
Aluminum Oxide
50%
Dielectric Reliability
50%
Reactive Sputter Deposition
25%
Leakage Current Density
25%
Breakdown Field
25%
Reliability Characteristics
25%
Mass Production
25%
Breakdown Voltage
25%
Dielectric Thickness
25%
Reliability Improvement
25%
High-permittivity
25%
Leakage Current Reduction
25%
Production Application
25%
Thickness Scaling
25%
Dielectric Scaling
25%
Thickness Characteristics
25%
Scale Characteristics
25%
Engineering
Flash Memory
100%
Dielectrics
100%
Breakdown Voltage
16%
Mass Production
16%
Breakdown Field
16%
Reliability Improvement
16%
Reactive Sputtering
16%
Material Science
Dielectric Material
100%
Density
16%
Al2O3
16%
Permittivity
16%