Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories

Y. Y. Chen*, T. H. Li, K. T. Kin, Chao-Hsin Chien, J. C. Lou

*此作品的通信作者

    研究成果: Conference contribution同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al 2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories.

    原文English
    主出版物標題NanoSingapore 2006
    主出版物子標題IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
    頁面463-466
    頁數4
    DOIs
    出版狀態Published - 14 11月 2006
    事件2006 IEEE Conference on Emerging Technologies - Nanoelectronics - Singapore, 新加坡
    持續時間: 10 1月 200613 1月 2006

    出版系列

    名字NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
    2006

    Conference

    Conference2006 IEEE Conference on Emerging Technologies - Nanoelectronics
    國家/地區新加坡
    城市Singapore
    期間10/01/0613/01/06

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