Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories

Y. Y. Chen; T. H. Li; K. T. Kin; Chao-Hsin Chien; J. C. Lou

doi:10.1109/NANOEL.2006.1609772

Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories

Y. Y. Chen^*, T. H. Li, K. T. Kin, Chao-Hsin Chien, J. C. Lou

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

2 引文斯高帕斯（Scopus）

摘要

In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al₂O₃ and HfO₂ IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the Q_BD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al ₂O₃ and MOCVD-HfO₂ IPD possess great potential for next generation stacked-gate flash memories.

原文	English
主出版物標題	NanoSingapore 2006
主出版物子標題	IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
頁面	463-466
頁數	4
DOIs	https://doi.org/10.1109/NANOEL.2006.1609772
出版狀態	Published - 14 11月 2006
事件	2006 IEEE Conference on Emerging Technologies - Nanoelectronics - Singapore, Singapore 持續時間: 10 1月 2006 → 13 1月 2006

出版系列

名字	NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
卷	2006

Conference

Conference	2006 IEEE Conference on Emerging Technologies - Nanoelectronics
國家/地區	Singapore
城市	Singapore
期間	10/01/06 → 13/01/06

存取文件

10.1109/NANOEL.2006.1609772

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Link to publication in Scopus

引用此

Chen, Y. Y., Li, T. H., Kin, K. T., Chien, C-H., & Lou, J. C. (2006). Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories. 於 NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings (頁 463-466). 文章 1609772 (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings; 卷 2006). https://doi.org/10.1109/NANOEL.2006.1609772

@inproceedings{8f86822291a84e5280b07cce26a2aeab,

title = "Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories",

abstract = "In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al 2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories.",

author = "Chen, {Y. Y.} and Li, {T. H.} and Kin, {K. T.} and Chao-Hsin Chien and Lou, {J. C.}",

year = "2006",

month = nov,

day = "14",

doi = "10.1109/NANOEL.2006.1609772",

language = "English",

isbn = "0780393589",

series = "NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings",

pages = "463--466",

booktitle = "NanoSingapore 2006",

note = "2006 IEEE Conference on Emerging Technologies - Nanoelectronics ; Conference date: 10-01-2006 Through 13-01-2006",

}

Chen, YY, Li, TH, Kin, KT, Chien, C-H & Lou, JC 2006, Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories. 於 NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings., 1609772, NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings, 卷 2006, 頁 463-466, 2006 IEEE Conference on Emerging Technologies - Nanoelectronics, Singapore, Singapore, 10/01/06. https://doi.org/10.1109/NANOEL.2006.1609772

Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories. / Chen, Y. Y.; Li, T. H.; Kin, K. T. 等.
NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. 2006. p. 463-466 1609772 (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings; 卷 2006).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories

AU - Chen, Y. Y.

AU - Li, T. H.

AU - Kin, K. T.

AU - Chien, Chao-Hsin

AU - Lou, J. C.

PY - 2006/11/14

Y1 - 2006/11/14

N2 - In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al 2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories.

AB - In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using MOCVD deposition, the QBD can be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al 2O3 and MOCVD-HfO2 IPD possess great potential for next generation stacked-gate flash memories.

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U2 - 10.1109/NANOEL.2006.1609772

DO - 10.1109/NANOEL.2006.1609772

M3 - Conference contribution

AN - SCOPUS:33750806760

SN - 0780393589

SN - 9780780393585

T3 - NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings

SP - 463

EP - 466

BT - NanoSingapore 2006

T2 - 2006 IEEE Conference on Emerging Technologies - Nanoelectronics

Y2 - 10 January 2006 through 13 January 2006

ER -

Chen YY, Li TH, Kin KT, Chien C-H, Lou JC. Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories. 於 NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. 2006. p. 463-466. 1609772. (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings). doi: 10.1109/NANOEL.2006.1609772

Characterization of inter-poly high-κ dielectrics for next generation stacked-gate flash memories

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