Characterization of Highly Textured PZT Thin Films Grown on LaNiO3 Coated Si Substrates by MOCVD

Chun-Hsiung Lin*, B. M. Yen, Haydn Chen, T. B. Wu, Hao-Chung Kuo, G. E. Stillman

*此作品的通信作者

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Highly textured PbZr x Ti 1-x O 3 (PZT) thin films with x = 0-0.6 were grown on LaNiO 3 coated Si substrates at 600°C by metal-organic chemical vapor deposition (MOCVD). The preferred crystalline orientation of PZT thin films with various Zr concentration were characterized by X-ray diffraction (XRD). Microstructures were studied by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The dielectric constants, hysteresis and fatigue behavior of these thin films were also measured. The relationship between growth rate and the preferential orientation is discussed. Furthermore, the dependence of the electrical properties on Zr concentration and preferential orientation is demonstrated.

原文English
頁(從 - 到)189-194
頁數6
期刊Materials Research Society Symposium - Proceedings
493
DOIs
出版狀態Published - 11月 1997
事件Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
持續時間: 30 11月 19974 12月 1997

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