Characterization of hafnium diboride thin film resistors by r.f. magnetron sputtering

D. S. Wuu; M. L. Lee; T. Y. Lin; Ray-Hua Horng

doi:10.1016/0254-0584(96)80096-4

Characterization of hafnium diboride thin film resistors by r.f. magnetron sputtering

D. S. Wuu^*, M. L. Lee, T. Y. Lin, Ray-Hua Horng

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

27 引文斯高帕斯（Scopus）

摘要

The material properties of sputtered HfB₂ thin films ( ≈0.1 μm) are studied to better understand their behavior when used in ink-jet printing devices. The deposition conditions (i.e., working pressure, r.f. power, and heater temperature) were found to have large effects on the resistivity and stress of the film. The resistivity results obtained for HfB₂ could mainly be attributed to the grain size effects. The stress built in during deposition was confirmed to be the primary stress component for the as-deposited heater film. In addition, the stress variation in the HfB₂ sample during the thermal cycling was investigated. Under proper sputtering conditions, the HfB₂ stress can be repeatedly controlled from tension ( +3×10⁹ dyne cm^-2, 100 °C) to compression ( -3.5×10⁹ dyne cm^-2, 400 °C). This trend is quite useful and can be utilized to minimize the heater stress during ink-jet device operation.

原文	English
頁（從 - 到）	163-166
頁數	4
期刊	Materials Chemistry and Physics
卷	45
發行號	2
DOIs	https://doi.org/10.1016/0254-0584(96)80096-4
出版狀態	Published - 8月 1996

存取文件

10.1016/0254-0584(96)80096-4

其它文件與鏈接

Link to publication in Scopus

引用此

@article{a388f8d8c2c64781a34940ea9381ba28,

title = "Characterization of hafnium diboride thin film resistors by r.f. magnetron sputtering",

abstract = "The material properties of sputtered HfB2 thin films ( ≈0.1 μm) are studied to better understand their behavior when used in ink-jet printing devices. The deposition conditions (i.e., working pressure, r.f. power, and heater temperature) were found to have large effects on the resistivity and stress of the film. The resistivity results obtained for HfB2 could mainly be attributed to the grain size effects. The stress built in during deposition was confirmed to be the primary stress component for the as-deposited heater film. In addition, the stress variation in the HfB2 sample during the thermal cycling was investigated. Under proper sputtering conditions, the HfB2 stress can be repeatedly controlled from tension ( +3×109 dyne cm-2, 100 °C) to compression ( -3.5×109 dyne cm-2, 400 °C). This trend is quite useful and can be utilized to minimize the heater stress during ink-jet device operation.",

keywords = "Hafnium diboride, Ink-jet printing devices, R.f. magnetron sputtering, Thin film resistors",

author = "Wuu, {D. S.} and Lee, {M. L.} and Lin, {T. Y.} and Ray-Hua Horng",

year = "1996",

month = aug,

doi = "10.1016/0254-0584(96)80096-4",

language = "English",

volume = "45",

pages = "163--166",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Characterization of hafnium diboride thin film resistors by r.f. magnetron sputtering

AU - Wuu, D. S.

AU - Lee, M. L.

AU - Lin, T. Y.

AU - Horng, Ray-Hua

PY - 1996/8

Y1 - 1996/8

N2 - The material properties of sputtered HfB2 thin films ( ≈0.1 μm) are studied to better understand their behavior when used in ink-jet printing devices. The deposition conditions (i.e., working pressure, r.f. power, and heater temperature) were found to have large effects on the resistivity and stress of the film. The resistivity results obtained for HfB2 could mainly be attributed to the grain size effects. The stress built in during deposition was confirmed to be the primary stress component for the as-deposited heater film. In addition, the stress variation in the HfB2 sample during the thermal cycling was investigated. Under proper sputtering conditions, the HfB2 stress can be repeatedly controlled from tension ( +3×109 dyne cm-2, 100 °C) to compression ( -3.5×109 dyne cm-2, 400 °C). This trend is quite useful and can be utilized to minimize the heater stress during ink-jet device operation.

AB - The material properties of sputtered HfB2 thin films ( ≈0.1 μm) are studied to better understand their behavior when used in ink-jet printing devices. The deposition conditions (i.e., working pressure, r.f. power, and heater temperature) were found to have large effects on the resistivity and stress of the film. The resistivity results obtained for HfB2 could mainly be attributed to the grain size effects. The stress built in during deposition was confirmed to be the primary stress component for the as-deposited heater film. In addition, the stress variation in the HfB2 sample during the thermal cycling was investigated. Under proper sputtering conditions, the HfB2 stress can be repeatedly controlled from tension ( +3×109 dyne cm-2, 100 °C) to compression ( -3.5×109 dyne cm-2, 400 °C). This trend is quite useful and can be utilized to minimize the heater stress during ink-jet device operation.

KW - Hafnium diboride

KW - Ink-jet printing devices

KW - R.f. magnetron sputtering

KW - Thin film resistors

UR - http://www.scopus.com/inward/record.url?scp=0030212855&partnerID=8YFLogxK

U2 - 10.1016/0254-0584(96)80096-4

DO - 10.1016/0254-0584(96)80096-4

M3 - Article

AN - SCOPUS:0030212855

SN - 0254-0584

VL - 45

SP - 163

EP - 166

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2

ER -

Characterization of hafnium diboride thin film resistors by r.f. magnetron sputtering

摘要

存取文件

其它文件與鏈接

指紋

引用此