Characterization of ESD-induced electromigration on CMOS metallization in on-chip ESD protection circuit

Yang Shou Hou, Chun Yu Lin

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Electrostatic discharge (ESD) and electromigration are critical issues that significantly impact the reliability of ICs. While both of these phenomena have been studied independently, the combination of the two, ESD-induced electromigration, has received less attention, potentially compromising IC reliability. This work analyzes various types of metal with different lengths, widths, and angles commonly used in ESD protection circuits in the CMOS process. The objective is to observe their behavior under continuous ESD zapping. The ESD-induced electromigration of metallization in the CMOS process has been analyzed, and metal sensitivity to system-level ESD events has also been identified. It is also analyzed from the perspective of energy that the ESD energy that metal can withstand will decrease as the ESD voltage increases, which will be even more detrimental to the ESD reliability of ICs. The findings from this study aim to provide valuable insights for designing metal lines in ICs to enhance ESD protection.

原文English
文章編號02SP58
期刊Japanese journal of applied physics
63
發行號2
DOIs
出版狀態Published - 29 2月 2024

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