Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

Z. F. Lou; C. Y. Liao; K. Y. Hsiang; C. Y. Lin; Y. D. Lin; P. C. Yeh; C. Y. Wang; H. Y. Yang; P. J. Tzeng; T. H. Hou; Y. T. Tang; M. H. Lee

doi:10.1109/VLSI-TSA54299.2022.9771012

Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

Z. F. Lou, C. Y. Liao, K. Y. Hsiang, C. Y. Lin, Y. D. Lin, P. C. Yeh, C. Y. Wang, H. Y. Yang, P. J. Tzeng, T. H. Hou, Y. T. Tang^*, M. H. Lee^*

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

3 引文斯高帕斯（Scopus）

摘要

A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.

原文	English
主出版物標題	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781665409230
DOIs	https://doi.org/10.1109/VLSI-TSA54299.2022.9771012
出版狀態	Published - 2022
事件	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, 台灣持續時間: 18 4月 2022 → 21 4月 2022

出版系列

名字	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
國家/地區	台灣
城市	Hsinchu
期間	18/04/22 → 21/04/22

存取文件

10.1109/VLSI-TSA54299.2022.9771012

其它文件與鏈接

Link to publication in Scopus

引用此

Lou, Z. F., Liao, C. Y., Hsiang, K. Y., Lin, C. Y., Lin, Y. D., Yeh, P. C., Wang, C. Y., Yang, H. Y., Tzeng, P. J., Hou, T. H., Tang, Y. T., & Lee, M. H. (2022). Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA54299.2022.9771012

Lou, Z. F. ; Liao, C. Y. ; Hsiang, K. Y. 等. / Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

@inproceedings{64f8fa3735f941b2977af670c4d37afa,

title = "Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory",

abstract = "A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.",

keywords = "Double HZO, FeFET, ferroelectric",

author = "Lou, \{Z. F.\} and Liao, \{C. Y.\} and Hsiang, \{K. Y.\} and Lin, \{C. Y.\} and Lin, \{Y. D.\} and Yeh, \{P. C.\} and Wang, \{C. Y.\} and Yang, \{H. Y.\} and Tzeng, \{P. J.\} and Hou, \{T. H.\} and Tang, \{Y. T.\} and Lee, \{M. H.\}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",

year = "2022",

doi = "10.1109/VLSI-TSA54299.2022.9771012",

language = "English",

series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

address = "美國",

}

Lou, ZF, Liao, CY, Hsiang, KY, Lin, CY, Lin, YD, Yeh, PC, Wang, CY, Yang, HY, Tzeng, PJ, Hou, TH, Tang, YT & Lee, MH 2022, Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Institute of Electrical and Electronics Engineers Inc., 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Hsinchu, 台灣, 18/04/22. https://doi.org/10.1109/VLSI-TSA54299.2022.9771012

Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. / Lou, Z. F.; Liao, C. Y.; Hsiang, K. Y. 等.
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

AU - Lou, Z. F.

AU - Liao, C. Y.

AU - Hsiang, K. Y.

AU - Lin, C. Y.

AU - Lin, Y. D.

AU - Yeh, P. C.

AU - Wang, C. Y.

AU - Yang, H. Y.

AU - Tzeng, P. J.

AU - Hou, T. H.

AU - Tang, Y. T.

AU - Lee, M. H.

PY - 2022

Y1 - 2022

N2 - A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.

AB - A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.

KW - Double HZO

KW - FeFET

KW - ferroelectric

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U2 - 10.1109/VLSI-TSA54299.2022.9771012

DO - 10.1109/VLSI-TSA54299.2022.9771012

M3 - Conference contribution

AN - SCOPUS:85130432209

T3 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

BT - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Y2 - 18 April 2022 through 21 April 2022

ER -

Lou ZF, Liao CY, Hsiang KY, Lin CY, Lin YD, Yeh PC 等. Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. 於 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). doi: 10.1109/VLSI-TSA54299.2022.9771012