@inproceedings{64f8fa3735f941b2977af670c4d37afa,
title = "Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory",
abstract = "A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.",
keywords = "Double HZO, FeFET, ferroelectric",
author = "Lou, \{Z. F.\} and Liao, \{C. Y.\} and Hsiang, \{K. Y.\} and Lin, \{C. Y.\} and Lin, \{Y. D.\} and Yeh, \{P. C.\} and Wang, \{C. Y.\} and Yang, \{H. Y.\} and Tzeng, \{P. J.\} and Hou, \{T. H.\} and Tang, \{Y. T.\} and Lee, \{M. H.\}",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",
year = "2022",
doi = "10.1109/VLSI-TSA54299.2022.9771012",
language = "English",
series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",
address = "美國",
}