Characterization of CVD Ti_xC_yN_z films deposited as diffusion barriers for Cu on low-k dielectrics methylsilsequiazane

Keyphrases

• Low-k Dielectric 100%
• Diffusion Barrier 100%
• NH3 Plasma Treatment 100%
• Metal-organic Chemical Vapor Deposition (MOCVD) 50%
• Silica 50%
• Thermal Annealing 50%
• Annealing 50%
• Rutile 50%
• Capacitors 50%
• Electrical Properties 50%
• Resistivity 50%
• Plasma Treatment 50%
• Reaction Gas 50%
• Annealing Effect 50%
• Microstructure Composition 50%
• Microstructure Properties 50%
• Oxygen Concentration 50%
• Tetrakis 50%
• Barrier Film 50%
• Dimethylamino 50%
• Compositional Properties 50%

Material Science

• Film 100%
• Chemical Vapor Deposition 100%
• Dielectric Material 100%
• Multilayer 50%
• Electrical Resistivity 25%
• Annealing 25%
• Capacitor 25%
• Metal-Organic Chemical Vapor Deposition 25%
• Titanium 25%
• Phase Composition 25%