The impact of degradation of Flash memory cell characteristics caused by bitline stress during program/erase cycling is investigated considering the accentuated generation rate of negative oxide trap charges and interface-states. A special emphasis is focused on the observation of a significant amount of hole traps and their movement into the channel region. These oxide damages dramatically alter the device characteristics, and initiate severe read-disturb issue.
|頁（從 - 到）||97-103|
|期刊||Annual Proceedings - Reliability Physics (Symposium)|
|出版狀態||Published - 1 1月 1997|
|事件||Proceedings of the 1997 35th Annual IEEE International Reliability Physics Symposium - Denver, CO, USA|
持續時間: 8 4月 1997 → 10 4月 1997