Characterization of 4H-SiC PMOSFET with P+Poly-Si Gate

Chia Lung Hung; Bing Yue Tsui

doi:10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134380

Characterization of 4H-SiC PMOSFET with P⁺Poly-Si Gate

Chia Lung Hung, Bing Yue Tsui

電子研究所

研究成果: Conference contribution › 同行評審

摘要

With the progress of SiC technology, the performance of PMOSFET attracted more and more attentions. One of the critical issues of 4H-SiC PMOSFET is its high threshold voltage. In this work, the characteristics of PMOSFET with P+ poly-Si gate is reported for the first time. A reduction of threshold voltage of 0.38 V is obtained. High performance PMOSFET and symmetrical voltage transfer characteristic of CMOS inverter are demonstrated.

原文	English
主出版物標題	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9798350334166
DOIs	https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134380
出版狀態	Published - 2023
事件	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, 台灣持續時間: 17 4月 2023 → 20 4月 2023

出版系列

名字	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference	2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
國家/地區	台灣
城市	Hsinchu
期間	17/04/23 → 20/04/23

存取文件

10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134380

其它文件與鏈接

Link to publication in Scopus

引用此

Hung, C. L., & Tsui, B. Y. (2023). Characterization of 4H-SiC PMOSFET with P⁺Poly-Si Gate. 於 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134380

Hung, Chia Lung ; Tsui, Bing Yue. / Characterization of 4H-SiC PMOSFET with P⁺Poly-Si Gate. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

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title = "Characterization of 4H-SiC PMOSFET with P+Poly-Si Gate",

abstract = "With the progress of SiC technology, the performance of PMOSFET attracted more and more attentions. One of the critical issues of 4H-SiC PMOSFET is its high threshold voltage. In this work, the characteristics of PMOSFET with P+ poly-Si gate is reported for the first time. A reduction of threshold voltage of 0.38 V is obtained. High performance PMOSFET and symmetrical voltage transfer characteristic of CMOS inverter are demonstrated.",

author = "Hung, {Chia Lung} and Tsui, {Bing Yue}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 ; Conference date: 17-04-2023 Through 20-04-2023",

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series = "2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings",

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Hung, CL & Tsui, BY 2023, Characterization of 4H-SiC PMOSFET with P⁺Poly-Si Gate. 於 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023, Hsinchu, 台灣, 17/04/23. https://doi.org/10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134380

Characterization of 4H-SiC PMOSFET with P⁺Poly-Si Gate. / Hung, Chia Lung; Tsui, Bing Yue.
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings).

研究成果: Conference contribution › 同行評審

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AB - With the progress of SiC technology, the performance of PMOSFET attracted more and more attentions. One of the critical issues of 4H-SiC PMOSFET is its high threshold voltage. In this work, the characteristics of PMOSFET with P+ poly-Si gate is reported for the first time. A reduction of threshold voltage of 0.38 V is obtained. High performance PMOSFET and symmetrical voltage transfer characteristic of CMOS inverter are demonstrated.

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M3 - Conference contribution

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T3 - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

BT - 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

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Hung CL, Tsui BY. Characterization of 4H-SiC PMOSFET with P⁺Poly-Si Gate. 於 2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings). doi: 10.1109/VLSI-TSA/VLSI-DAT57221.2023.10134380