Characterization of 4H-SiC PMOSFET with P+Poly-Si Gate

Chia Lung Hung, Bing Yue Tsui

研究成果: Conference contribution同行評審

摘要

With the progress of SiC technology, the performance of PMOSFET attracted more and more attentions. One of the critical issues of 4H-SiC PMOSFET is its high threshold voltage. In this work, the characteristics of PMOSFET with P+ poly-Si gate is reported for the first time. A reduction of threshold voltage of 0.38 V is obtained. High performance PMOSFET and symmetrical voltage transfer characteristic of CMOS inverter are demonstrated.

原文English
主出版物標題2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350334166
DOIs
出版狀態Published - 2023
事件2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, Taiwan
持續時間: 17 4月 202320 4月 2023

出版系列

名字2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
國家/地區Taiwan
城市Hsinchu
期間17/04/2320/04/23

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