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Characteristics of the inter-poly Al
2
O
3
dielectrics on NH
3
-nitrided bottom poly-Si for next-generation flash memories
Yeong Yuh Chen,
Chao-Hsin Chien
*
, Jen Chung Lou
*
此作品的通信作者
電子研究所
研究成果
:
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同行評審
14
引文 斯高帕斯（Scopus）
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指紋
深入研究「Characteristics of the inter-poly Al
2
O
3
dielectrics on NH
3
-nitrided bottom poly-Si for next-generation flash memories」主題。共同形成了獨特的指紋。
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Keyphrases
Poly-Si
100%
Flash Memory
100%
Nitrides
100%
Aluminum Oxide
100%
Al2O3 Dielectric
100%
Interpoly Dielectrics
80%
Electrical Properties
60%
Annealing Temperature
60%
Post-deposition Annealing
60%
Capacitors
40%
Leakage Current
40%
Nitridation
40%
Surface Nitridation
40%
Trapping Rate
40%
Electron Traps
40%
Auger Electron Spectroscopy
20%
Annealing
20%
X-ray Photoelectron Spectroscopy
20%
Electrical Reliability
20%
Post-annealing
20%
Low Dielectric Constant
20%
Annealing Conditions
20%
Property Characteristics
20%
Optimal Quality
20%
Si-N
20%
Film Deposition
20%
Poly-Si Film
20%
Breakdown Field
20%
N-layer
20%
Excess Oxygen
20%
As-deposited Films
20%
Charge to Breakdown
20%
Gate Bias
20%
Dielectric Characteristics
20%
Electron Trapping Centres
20%
Dielectric Properties
20%
Reliability Characteristics
20%
Negative Polarity
20%
Nitridation Treatment
20%
Spectroscopic Analysis
20%
Material Science
Dielectric Material
100%
Al2O3
100%
Nitriding
83%
Film
33%
Capacitor
33%
X-Ray Photoelectron Spectroscopy
16%
Annealing
16%
Permittivity
16%
Aluminum Oxide
16%
Dielectric Property
16%
Auger Electron Spectroscopy
16%