Characteristics of the fluorinated high-κ inter-poly dielectrics

Chih Ren Hsieh*, Yung Yu Chen, Kwung Wen Lu, Kuo-Jui Lin, Jen Chung Lou

*此作品的通信作者

    研究成果: Article同行評審

    6 引文 斯高帕斯(Scopus)

    摘要

    In this letter, the reliabilities and insulating characteristics of the fluorinated aluminum oxide Al2O3 and hafnium oxide HfO2 inter-poly dielectric (IPD) are studied for the first time. Compared with the IPDs without fluorine incorporation, the results clearly indicate that fluorine incorporation process is effective to improve the insulating characteristics of both the Al2O3 and HfO 2 IPDs, mainly ascribed to the trap density reduction and the smooth interface. Although HfO2 possesses higher dielectric constant to increase the gate coupling ratio, the results apparently indicate that the fluorine incorporation process is more effective to improve the dielectric characteristics of the Al2O3 IPD than the HfO2 IPD.

    原文English
    文章編號5605221
    頁(從 - 到)1446-1448
    頁數3
    期刊IEEE Electron Device Letters
    31
    發行號12
    DOIs
    出版狀態Published - 12月 2010

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