TY - JOUR
T1 - Characteristics of sputtered TaX absorbers for X-ray mask
AU - Sheu, Jeng-Tzong
AU - Chu, A.
AU - Ding, J. H.
AU - Su, S.
PY - 1999/1/1
Y1 - 1999/1/1
N2 - The materials of x-ray absorbers for x-ray mask have been changed from gold (Au) and tungsten-based alloys to tantalum (Ta) and Ta-based compounds in x-ray lithography (XRL). Different candidates of x-ray absorber, especially Ta-based (TaX) compounds, were sputtered and evaluated in this study. By incorporating silicon or germanium into tantalum, amorphous TaSi-based and TaGe-based compounds were formed and qualified as the absorber materials. Because the reproducibility of as-deposited stress by tuning the sputtering parameters is not so well for these compounds right after sputtering, we utilized the step annealing by RTA to control the stress such that within ±20 MPa is obtainable. Furthermore, with N2 plasma treatment in PECVD chamber the slope of stress with respect to annealing temperature is smaller and posses good stability after long-time exposure to the air. Finally, the etching properties of TaX compounds were compared with and without tri-layer structure of oxide/absorber/oxide. And, 0.35 μm patterns are etched successfully with vertical sidewall by Cl2 etchant.
AB - The materials of x-ray absorbers for x-ray mask have been changed from gold (Au) and tungsten-based alloys to tantalum (Ta) and Ta-based compounds in x-ray lithography (XRL). Different candidates of x-ray absorber, especially Ta-based (TaX) compounds, were sputtered and evaluated in this study. By incorporating silicon or germanium into tantalum, amorphous TaSi-based and TaGe-based compounds were formed and qualified as the absorber materials. Because the reproducibility of as-deposited stress by tuning the sputtering parameters is not so well for these compounds right after sputtering, we utilized the step annealing by RTA to control the stress such that within ±20 MPa is obtainable. Furthermore, with N2 plasma treatment in PECVD chamber the slope of stress with respect to annealing temperature is smaller and posses good stability after long-time exposure to the air. Finally, the etching properties of TaX compounds were compared with and without tri-layer structure of oxide/absorber/oxide. And, 0.35 μm patterns are etched successfully with vertical sidewall by Cl2 etchant.
UR - http://www.scopus.com/inward/record.url?scp=0032678330&partnerID=8YFLogxK
U2 - 10.1117/12.351128
DO - 10.1117/12.351128
M3 - Conference article
AN - SCOPUS:0032678330
SN - 0277-786X
VL - 3676
SP - 42
EP - 45
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
IS - I
T2 - Proceedings of the 1999 Emerging Lithographic Technologies III
Y2 - 15 March 1999 through 17 March 1999
ER -