In this paper, siliconoxidenitrideoxidesemiconductor (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method with multilevel and 2-b/cell operation have been successfully demonstrated. The proposed in situ Si-NC deposition method exhibits the advantages of low cost, simplicity, and compatibility with modern IC processes. SONOS memories with embedded Si-NCs exhibit a significantly improved performance with a large memory window (> 5.5 V), low operating voltage (P/E voltage: V g = 6 V, V d = 7 V and V g = -7 V, V d = 10 V,respectively), greater tolerable gate and drain disturbance ( V t shift 0.2 V), negligible second-bit effect, high P/E speed (after programming time = 10μs with a 2-V shift of V t under V g = V d = 6 V operation), good retention time (> 10 8 s for 13% charge loss), and excellent endurance performance (after 10 4 P/E cycles with a memory window of 3 V).
|頁（從 - 到）||1895-1902|
|期刊||IEEE Transactions on Electron Devices|
|出版狀態||Published - 1 8月 2010|