Characteristics of SONOS-Ttpe flash memory with in situ embedded silicon nanocrystals

In this paper, siliconoxidenitrideoxidesemiconductor (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method with multilevel and 2-b/cell operation have been successfully demonstrated. The proposed in situ Si-NC deposition method exhibits the advantages of low cost, simplicity, and compatibility with modern IC processes. SONOS memories with embedded Si-NCs exhibit a significantly improved performance with a large memory window (> 5.5 V), low operating voltage (P/E voltage: V _g = 6 V, V _d = 7 V and V _g = -7 V, V _d = 10 V,respectively), greater tolerable gate and drain disturbance ( V _t shift 0.2 V), negligible second-bit effect, high P/E speed (after programming time = 10μs with a 2-V shift of V _t under V _g = V _d = 6 V operation), good retention time (> 10 ⁸ s for 13% charge loss), and excellent endurance performance (after 10 ⁴ P/E cycles with a memory window of 3 V).