Characteristics of SONOS-Ttpe flash memory with in situ embedded silicon nanocrystals

Tsung Yu Chiang*, Yi Hong Wu, William Cheng Yu Ma, Po Yi Kuo, Kuan Ti Wang, Chia Chun Liao, Chi Ruei Yeh, Wen Luh Yang, Tien-Sheng Chao


研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)


In this paper, siliconoxidenitrideoxidesemiconductor (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method with multilevel and 2-b/cell operation have been successfully demonstrated. The proposed in situ Si-NC deposition method exhibits the advantages of low cost, simplicity, and compatibility with modern IC processes. SONOS memories with embedded Si-NCs exhibit a significantly improved performance with a large memory window (> 5.5 V), low operating voltage (P/E voltage: V g = 6 V, V d = 7 V and V g = -7 V, V d = 10 V,respectively), greater tolerable gate and drain disturbance ( V t shift 0.2 V), negligible second-bit effect, high P/E speed (after programming time = 10μs with a 2-V shift of V t under V g = V d = 6 V operation), good retention time (> 10 8 s for 13% charge loss), and excellent endurance performance (after 10 4 P/E cycles with a memory window of 3 V).

頁(從 - 到)1895-1902
期刊IEEE Transactions on Electron Devices
出版狀態Published - 1 8月 2010


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