Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range

Hung Pin D. Yang; I. Chen Hsu; Fang I. Lai; Kuo-Jui Lin; Ru Shang Hsiao; Hao-Chung Kuo; Jim Y. Chi

doi:10.1080/09500340701576288

Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range

Hung Pin D. Yang, I. Chen Hsu, Fang I. Lai, Kuo-Jui Lin, Ru Shang Hsiao, Hao-Chung Kuo, Jim Y. Chi

光電工程學系

研究成果: Article › 同行評審

摘要

We have made InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting lasers (QD PhC-VCSELs) for fiber-optic applications. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. Near-field images of the PhC-VCSELs were also measured and studied.

原文	English
頁（從 - 到）	1013-1021
頁數	9
期刊	Journal of Modern Optics
卷	55
發行號	6
DOIs	https://doi.org/10.1080/09500340701576288
出版狀態	Published - 3月 2008

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title = "Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range",

abstract = "We have made InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting lasers (QD PhC-VCSELs) for fiber-optic applications. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. Near-field images of the PhC-VCSELs were also measured and studied.",

keywords = "InGaAs, Photonic-crystal, Quantum-dot, Sub-monolayer, VCSEL",

author = "Yang, {Hung Pin D.} and Hsu, {I. Chen} and Lai, {Fang I.} and Kuo-Jui Lin and Hsiao, {Ru Shang} and Hao-Chung Kuo and Chi, {Jim Y.}",

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T1 - Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range

AU - Yang, Hung Pin D.

AU - Hsu, I. Chen

AU - Lai, Fang I.

AU - Lin, Kuo-Jui

AU - Hsiao, Ru Shang

AU - Kuo, Hao-Chung

AU - Chi, Jim Y.

PY - 2008/3

Y1 - 2008/3

N2 - We have made InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting lasers (QD PhC-VCSELs) for fiber-optic applications. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. Near-field images of the PhC-VCSELs were also measured and studied.

AB - We have made InGaAs sub-monolayer (SML) quantum dot photonic crystal vertical-cavity surface-emitting lasers (QD PhC-VCSELs) for fiber-optic applications. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layer is formed by alternate deposition of InAs (1 ML) and GaAs. Single fundamental mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. Side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. Near-field images of the PhC-VCSELs were also measured and studied.

KW - InGaAs

KW - Photonic-crystal

KW - Quantum-dot

KW - Sub-monolayer

KW - VCSEL

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JF - Journal of Modern Optics

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ER -

Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range

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