This paper present a high-quality polysilicon oxide combining N 2O nitridation and chemical mechanical polishing (CMP) processes. Experimental results indicate that polyoxide grown on the CMP sample exhibits a lower leakage current, higher dielectric breakdown field, higher electron barrier height, less electron trapping rate, higher charge-to-breakdown (Q bd), and lower density of trapping charge than those of non-CMP samples. In addition, the CMP process enhances nitrogen incorporation at the interface by the N 2O nitridation, ultimately improving the polyoxide quality. Moreover, the CMP process smooths the surface of polysilicon and this planar surface reduces the out-diffusion of the phosphorous during thermal oxidation.
|頁（從 - 到）||1545-1552|
|期刊||IEEE Transactions on Electron Devices|
|出版狀態||Published - 1 8月 2000|