Characteristics of Pb(Zr0.53Ti0-47)O3 on Metal and Al2O3/Si Substrates

C. L. Sun; San-Yuan Chen; M. Y. Yang; Albert Chin

doi:10.1149/1.1409398

Characteristics of Pb(Zr_0.53Ti_0-47)O₃ on Metal and Al₂O₃/Si Substrates

C. L. Sun^*, San-Yuan Chen, M. Y. Yang, Albert Chin

^*此作品的通信作者

材料科學與工程學系

研究成果: Article › 同行評審

11 引文斯高帕斯（Scopus）

摘要

We have fabricated Pb(Zr_0.53Ti_0.47)O₃ on Pt and Pb(Zr_0.53Ti_0.47)O₃ on 4 nm Al₂O₃/Si substrates. Although Pb(Zr_0.53Ti_0.47)O₃ on Pt has a larger dielectric constant and grain size than those on Al₂O₃/Si, the Pb(Zr_0.53Ti_0.47)O₃ thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of ∼3.6 V. Moreover, the leakage current density of Pb(Zr_0.53Ti_0.47)O₃ on Al₂O₃/Si at -10 V is nearly three orders of magnitude lower than that of Pb(Zr_0.53Ti_0.47)O₃ on Pt. The comparable memory characteristics and the lower leakage current of Pb(Zr_0.53Ti_0.47)O₃ on Al₂O₃/Si are important for continuous scaling down the ferroelectric memory.

原文	English
頁（從 - 到）	F203-F206
頁數	4
期刊	Journal of the Electrochemical Society
卷	148
發行號	11
DOIs	https://doi.org/10.1149/1.1409398
出版狀態	Published - 11月 2001

UN SDG

此研究成果有助於以下永續發展目標

存取文件

10.1149/1.1409398

其它文件與鏈接

Link to publication in Scopus

引用此

@article{b5c48dde8c044418bd7460dc22934a7f,

title = "Characteristics of Pb(Zr0.53Ti0-47)O3 on Metal and Al2O3/Si Substrates",

abstract = "We have fabricated Pb(Zr0.53Ti0.47)O3 on Pt and Pb(Zr0.53Ti0.47)O3 on 4 nm Al2O3/Si substrates. Although Pb(Zr0.53Ti0.47)O3 on Pt has a larger dielectric constant and grain size than those on Al2O3/Si, the Pb(Zr0.53Ti0.47)O3 thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of ∼3.6 V. Moreover, the leakage current density of Pb(Zr0.53Ti0.47)O3 on Al2O3/Si at -10 V is nearly three orders of magnitude lower than that of Pb(Zr0.53Ti0.47)O3 on Pt. The comparable memory characteristics and the lower leakage current of Pb(Zr0.53Ti0.47)O3 on Al2O3/Si are important for continuous scaling down the ferroelectric memory.",

author = "Sun, {C. L.} and San-Yuan Chen and Yang, {M. Y.} and Albert Chin",

year = "2001",

month = nov,

doi = "10.1149/1.1409398",

language = "English",

volume = "148",

pages = "F203--F206",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "11",

}

TY - JOUR

T1 - Characteristics of Pb(Zr0.53Ti0-47)O3 on Metal and Al2O3/Si Substrates

AU - Sun, C. L.

AU - Chen, San-Yuan

AU - Yang, M. Y.

AU - Chin, Albert

PY - 2001/11

Y1 - 2001/11

N2 - We have fabricated Pb(Zr0.53Ti0.47)O3 on Pt and Pb(Zr0.53Ti0.47)O3 on 4 nm Al2O3/Si substrates. Although Pb(Zr0.53Ti0.47)O3 on Pt has a larger dielectric constant and grain size than those on Al2O3/Si, the Pb(Zr0.53Ti0.47)O3 thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of ∼3.6 V. Moreover, the leakage current density of Pb(Zr0.53Ti0.47)O3 on Al2O3/Si at -10 V is nearly three orders of magnitude lower than that of Pb(Zr0.53Ti0.47)O3 on Pt. The comparable memory characteristics and the lower leakage current of Pb(Zr0.53Ti0.47)O3 on Al2O3/Si are important for continuous scaling down the ferroelectric memory.

AB - We have fabricated Pb(Zr0.53Ti0.47)O3 on Pt and Pb(Zr0.53Ti0.47)O3 on 4 nm Al2O3/Si substrates. Although Pb(Zr0.53Ti0.47)O3 on Pt has a larger dielectric constant and grain size than those on Al2O3/Si, the Pb(Zr0.53Ti0.47)O3 thin films on both substrates show good capacitance-voltage characteristics and the same threshold voltage shift of ∼3.6 V. Moreover, the leakage current density of Pb(Zr0.53Ti0.47)O3 on Al2O3/Si at -10 V is nearly three orders of magnitude lower than that of Pb(Zr0.53Ti0.47)O3 on Pt. The comparable memory characteristics and the lower leakage current of Pb(Zr0.53Ti0.47)O3 on Al2O3/Si are important for continuous scaling down the ferroelectric memory.

UR - http://www.scopus.com/inward/record.url?scp=0000746710&partnerID=8YFLogxK

U2 - 10.1149/1.1409398

DO - 10.1149/1.1409398

M3 - Article

AN - SCOPUS:0000746710

SN - 0013-4651

VL - 148

SP - F203-F206

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 11

ER -

Characteristics of Pb(Zr0.53Ti0-47)O3 on Metal and Al2O3/Si Substrates

摘要

UN SDG

存取文件

其它文件與鏈接

指紋

引用此

Characteristics of Pb(Zr_0.53Ti_0-47)O₃ on Metal and Al₂O₃/Si Substrates