Characteristics of PBTI and hot carrier stress for LTPS-TFT with high-κ gate dielectric

Ming Wen Ma*, Chih Yang Chen, Chun Jung Su, Woei Cherng Wu, Yi Hong Wu, Kuo Hsing Kao, Tien-Sheng Chao, Tan Fu Lei

*此作品的通信作者

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

In this letter, the characteristics of positive bias temperature instability (PBTI) and hot carrier stress (HCS) for the low-temperature poly-Si thin-film transistors (LTPS-TFTs) with HfO 2 gate dielectric are well investigated for the first time. Under room temperature stress condition, the PBTI shows a more serious degradation than does HCS, indicating that the gate bias stress would dominate the hot carrier degradation behavior for HfO 2 LTPS-TFT. In addition, an abnormal behavior of the I min degradation with different drain bias stress under high-temperature stress condition is also observed and identified in this letter. The degradation of device's performance under high-temperature stress condition can be attributed to the damages of both the HfO 2 gate dielectric and the poly-Si grain boundaries.

原文English
頁(從 - 到)171-173
頁數3
期刊IEEE Electron Device Letters
29
發行號2
DOIs
出版狀態Published - 1 2月 2008

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