Characteristics of p-type GaN films doped with isoelectronic indium atoms

F. C. Chang; K. C. Shen; H. M. Chung; M. C. Lee; W. H. Chen; Wei-Kuo Chen

Characteristics of p-type GaN films doped with isoelectronic indium atoms

F. C. Chang^*, K. C. Shen, H. M. Chung, M. C. Lee, W. H. Chen, Wei-Kuo Chen

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

The method of isoelectronic doping, is employed to prepare p-type GaN films using metalorganic chemical vapor deposition. With the addition of In atoms, the film surface becomes much smoother, and the corresponding hole concentration and resistivity are also improved, to 8.7 × 10¹⁷ cm^-3 and ∼ Ω-cm, respectively. More interestingly, it is found that an ohmic I-V characteristic can be obtained in such types of films without any dehydrogenation treatment.

原文	English
頁（從 - 到）	637-643
頁數	7
期刊	Chinese Journal of Physics
卷	40
發行號	6
出版狀態	Published - 1 12月 2002

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title = "Characteristics of p-type GaN films doped with isoelectronic indium atoms",

abstract = "The method of isoelectronic doping, is employed to prepare p-type GaN films using metalorganic chemical vapor deposition. With the addition of In atoms, the film surface becomes much smoother, and the corresponding hole concentration and resistivity are also improved, to 8.7 × 1017 cm-3 and ∼ Ω-cm, respectively. More interestingly, it is found that an ohmic I-V characteristic can be obtained in such types of films without any dehydrogenation treatment.",

author = "Chang, {F. C.} and Shen, {K. C.} and Chung, {H. M.} and Lee, {M. C.} and Chen, {W. H.} and Wei-Kuo Chen",

year = "2002",

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day = "1",

language = "English",

volume = "40",

pages = "637--643",

journal = "Chinese Journal of Physics",

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T1 - Characteristics of p-type GaN films doped with isoelectronic indium atoms

AU - Chang, F. C.

AU - Shen, K. C.

AU - Chung, H. M.

AU - Lee, M. C.

AU - Chen, W. H.

AU - Chen, Wei-Kuo

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The method of isoelectronic doping, is employed to prepare p-type GaN films using metalorganic chemical vapor deposition. With the addition of In atoms, the film surface becomes much smoother, and the corresponding hole concentration and resistivity are also improved, to 8.7 × 1017 cm-3 and ∼ Ω-cm, respectively. More interestingly, it is found that an ohmic I-V characteristic can be obtained in such types of films without any dehydrogenation treatment.

AB - The method of isoelectronic doping, is employed to prepare p-type GaN films using metalorganic chemical vapor deposition. With the addition of In atoms, the film surface becomes much smoother, and the corresponding hole concentration and resistivity are also improved, to 8.7 × 1017 cm-3 and ∼ Ω-cm, respectively. More interestingly, it is found that an ohmic I-V characteristic can be obtained in such types of films without any dehydrogenation treatment.

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M3 - Article

AN - SCOPUS:0036941155

SN - 0577-9073

VL - 40

SP - 637

EP - 643

JO - Chinese Journal of Physics

JF - Chinese Journal of Physics

IS - 6

ER -

Characteristics of p-type GaN films doped with isoelectronic indium atoms

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