Characteristics of organic memory using metal oxide nano-clusters

In this report, electrical properties of an organic memory device with a tri-layer structure, MoO₃ nano-clusters layer sandwiched between Alq₃ thin films, are investigated. The device using this kind of structure exhibits a large ON/OFF current density ratio over 10⁴, long retention time over 1hr, and an electrically programmable character. The formation of the bistable resistance switching of the device originates from a charge trapping effect of the MoO₃ nano-clusters layer. Moreover, the current density-voltage (J-V) characteristics of the device are quite different from those of organic bistable devices (OBDs) using MoO₃ nano-particles. No negative differential resistance is observed in the J-V curve of the device. This may be due to the distinct surface morphology of the MoO₃ layer on the Alq₃ thin film.