A molecular beam epitaxy InAs/InxGa1-xAs (x = 1 → 0)/AlyGa1-yAs (y = 0 → 0.3) heterojunction was used as an ohmic contact structure to the GaAs-based pseudomorphic high electron mobility transistors (PHEMTs). This nonalloyed PHEMT had a specific contact resistance rc of 1.05 × 10-7 Ω·cm2 and an extrinsic transconductance gme of 272 mS/mm for devices with 1 μm gate-length. Microwave measurements showed a current gain cut-off frequency ft of 22 GHz and a maximum oscillation frequency fmax of 43 GHz. These results are comparable to our best conventional PHEMTs' alloyed at 450°C and 2 min duration. Meanwhile, a small-signal equivalent circuit model of the nonalloyed PHEMT has also been demonstrated.
|頁（從 - 到）||3443-3447|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 1 六月 1997|