Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs

H. P.D. Yang*, C. Lu, R. Hsiao, C. Chiou, C. Lee, C. Huang, Hsin-Chieh Yu, C. Wang, K. Lin, N. A. Maleev, A. R. Kovsh, C. Sung, C. Lai, J. Wang, Jenn-Fang Chen, T. Lee, J. Y. Chi


研究成果: Article同行評審

19 引文 斯高帕斯(Scopus)


We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) in the 1.3 νm range. The epitaxial structures were grown on (1 0 0) GaAs substrates by metalorganic chemical vapour deposition (MOCVD) or molecular beam epitaxy (MBE). The nitrogen composition of the InGa(N)As/GaAs quantum-well (QW) active region is 0-0.02. The long-wavelength (up to 1.3 νm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE- and MOCVD-grown VCSELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In0.36Ga0.64N0.006As0.994/GaAs VCSELs. A very low Jth of 2.55 kA cm-2 was obtained for the InGaNAs/GaAs VCSELs. The MBE-grown devices were made with an intracavity structure. Top-emitting multi-mode 1.3 νm In0.35Ga 0.65N0.02As0.98/GaAs VCSELs with 1 mW output power have been achieved under RT CW operation. A Jth of 1.52 kA cm-2 has been obtained for the MBE-grown In0.35Ga 0.65N0.02As0.98/GaAs VCSELs, which is the lowest threshold current density reported. The emission characteristics of the InGaNAs/GaAs VCSELs were measured and analysed.

頁(從 - 到)834-839
期刊Semiconductor Science and Technology
出版狀態Published - 1 8月 2005


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