We report our results on InGaNAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) for fiber-optic applications in the 1.3 μm range. The epitaxial structures were grown on (100) GaAs substrates by MBE or MOCVD. The nitrogen composition of the InGaNAs/GaAs quantum-well (QW) active region is 0 to 0.02. Long-wavelength (up to 1.3 μm) room-temperature continuous-wave (RT CW) lasing operation was achieved for MBE and MOCVD-grown VCSELs. For MOCVD-grown devices with n- and p-doped distributed Bragg reflectors (DBRs), a maximum optical output power of 0.74 mW was measured for In 0.35Ga0.64N0.006As0.994/GaAs VCSELs. The MBE-grown devices were made with intracavity structure. Top-emitting multi-mode 1.3 μm In0.35Ga0.65N0.02As 0.98/GaAs VCSELs with 1 mW output power have been achieved under RT CW operation. Emission characteristics of InGaNAs/GaAs VCSELs were measured and analyzed.
|頁（從 - 到）||158-165|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||Published - 16 八月 2004|
|事件||Vertical-Cavity Surface-Emitting lasers VIII - San Jose, CA, United States|
持續時間: 28 一月 2004 → 29 一月 2004