Characteristics of HfO 2 /Poly-Si interfacial layer on CMOS LTPS-TFTs with HfO 2 gate dielectric and O 2 plasma surface treatment

Ming Wen Ma*, Tsung Yu Chiang, Woei Cherng Wu, Tien-Sheng Chao, Tan Fu Lei

*此作品的通信作者

研究成果: Article › 同行評審

17 引文 斯高帕斯（Scopus）

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Engineering & Materials Science

Chemical Compounds