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Characteristics of gate-all-around twin poly-Si nanowire thin-film transistors
Jeng-Tzong Sheu
*
, Po Chun Huang, Tzu Shiun Sheu, Chen Chia Chen, Lu An Chen
*
此作品的通信作者
奈米科技碩博班
研究成果
:
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29
引文 斯高帕斯(Scopus)
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Keyphrases
Thin-film Transistors
100%
Poly-Si Nanowire
100%
Gate-all-around
100%
Nanowires
75%
Polysilicon
25%
On-state Current
25%
High Efficiency
25%
Silicon Nanowires (SiNWs)
25%
Electrical Performance
25%
Current Ratio
25%
Drain Induced Barrier Lowering
25%
Low Threshold Voltage
25%
Trap-state Density
25%
Channel Gating
25%
Surface-to-volume Ratio
25%
Channel Structure
25%
Nanowire Channel
25%
Steep Subthreshold Swing
25%
NH3 Plasma Treatment
25%
Surrounding Gate
25%
Channel Splitting
25%
Grain Boundary Trap State
25%
Engineering
Thin-Film Transistor
100%
Si Nanowires
100%
Polysilicon
100%
Nanowire
100%
Electrical Performance
20%
Plasma Treatment
20%
Current Ratio
20%
Volume Ratio
20%
Channel Structure
20%
Controllability
20%
Material Science
Nanowire
100%
Thin-Film Transistor
100%
Density
16%
Silicon
16%
Surface (Surface Science)
16%
Grain Boundary
16%